N-type solar cell and preparation method of selective back surface fields of N-type solar cell
A solar cell and selective technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as complex processes and high equipment maintenance costs, achieve low energy consumption, reduce production costs, and avoid damage
Active Publication Date: 2013-07-31
一道新能源科技(衢州)有限公司
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Problems solved by technology
[0006] The present invention aims to provide an N-type solar cell and its selective back field preparation method to solve the problems of complicated process and high equipment maintenance cost in manufacturing selective back field on N-type solar cells in the prior art
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[0019] Hereinafter, the present invention will be described in detail with reference to the drawings and examples. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.
[0020] Explanation of terms:
[0021] Diffusion: Diffusion is a directional movement that makes the concentration or temperature tend to be uniform due to the uneven concentration of impurities or temperature inside the object (the chemical potential of the two phases in the object is not equal). Diffusion of impurities in semiconductors is a directional movement of impurities caused by impurity concentration gradients that make the impurity concentration tend to be uniform.
[0022] PN junction: Using different doping processes, P-type semiconductors and N-type semiconductors are fabricated on the same semiconductor (usually silicon) substrate through diffusion, and a space charge region is formed ...
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The invention provides an N-type solar cell and a preparation method of selective back surface fields of the N-type solar cell. The preparation method of the selective back surface fields of the N-type solar cell comprises the following steps that phosphorus slurry is printed in a preset position of a N-type substrate; high temperature diffusion is conducted on the N-type substrate printed with the phosphorus slurry; phosphorus oxychloride gas is supplied; and the selective back surface fields are formed. A highly-doped region is formed on the N-type substrate printed with the phosphorus slurry; a lowly-doped region is formed on the N-type substrate not printed with the phosphorus slurry by the diffusion of the phosphorus oxychloride gas; in this case, the selective back surface fields with different doping concentrations are formed on the N-type substrate; the preparation of the selective back surface fields can be achieved through a high-temperature process by the method; and damage to the N-type substrate due to high temperature for many times is avoided.
Description
technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to an N-type solar cell and a selective back field preparation method thereof. Background technique [0002] At present, most solar photovoltaic enterprises use P-type silicon materials to produce solar cells. The disadvantage of the P-type silicon battery is that the efficiency of the battery will gradually decay with the increase of the light time, which is mainly due to the combination of the boron atoms doped into the P-type silicon substrate and the oxygen atoms in the substrate to produce boron-oxygen pairs. , the boron-oxygen pair acts as a carrier trap, reducing the minority carrier lifetime, which leads to the attenuation of battery efficiency. The N-type silicon substrate has a high minority carrier lifetime and insensitivity to certain metal impurities, so the N-type silicon cell has high efficiency and good stability. [0003] At present, the selective back fiel...
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Login to View More IPC IPC(8): H01L31/18H01L31/068
CPCY02E10/50Y02E10/547Y02P70/50
Inventor 郎芳张伟王红芳王英超张生利赵文超李高非胡志岩熊景峰
Owner 一道新能源科技(衢州)有限公司