Check patentability & draft patents in minutes with Patsnap Eureka AI!

Resistive memory

A technology of resistive memory and resistance value, which is applied in the field of memory and can solve problems such as errors and memory cell failure

Active Publication Date: 2013-08-14
WINBOND ELECTRONICS CORP
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, limited by the element characteristics of the resistive memory, excessively frequent writing to the resistive memory will cause the memory cells in the resistive memory to fail and cause errors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive memory
  • Resistive memory
  • Resistive memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] figure 2 It is a schematic diagram of an embodiment of a memory cell of a resistive memory according to the present invention. The memory cell 20 is used for storing one-bit data, and includes a first storage element 21 , a second storage element 22 , a third storage element 23 and switch devices SW1 , SW2 and SW3 . In this embodiment and the following description, the memory element refers to a resistive memory element. When data is to be written into the memory cell 20, the control signal controls the switch devices SW1, SW2, and SW3 to be turned on, so that the first storage element 21, the second storage element 22, and the third storage element 23 are simultaneously written and stored. the same data. The first memory element 21 , the second memory element 22 and the third memory element 23 are switched between a high resistance state and a low resistance state by applying an applied voltage to record logic 1 and 0. When the data stored in the memory cell 20 is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a resistive memory. The resistive memory comprises a plurality of memory cells, and each of the memory cells comprises a first storage element and a second storage element. The first storage element is coupled between a power line and a bit line and stores first data. The second storage element is coupled between the power line and the bit line and stores the first data. When the memory cell is read, the logic level of the first data is determined according to a first current flowing through the first storage element, a read current generated by ta second current flowing through the first storage element, and a reference current.

Description

technical field [0001] The invention is a kind of memory, especially a kind of resistive memory which utilizes a plurality of memory cells to store a single bit. Background technique [0002] Flash memory is a non-volatile memory that can be electrically erased and rewritten, and is mainly used in memory cards and USB flash drives, as a general storage and between computer devices and digital products Transfer of data. [0003] The flash memory includes many storage blocks, and each storage block has a plurality of storage memory pages for storing data. The flash memory is erased in units of storage blocks, and written in units of storage memory pages. In other words, when the data of the flash memory is erased, all the storage memory pages in one storage block of the flash memory must be erased together. In addition, data can only be written to storage memory pages that do not store data or erased storage memory pages. [0004] However, each memory block in the flash me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/16
CPCG11C11/16
Inventor 焦佑钧詹东义林晨曦张文岳
Owner WINBOND ELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com