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Solid-state imaging device

A technology of solid-state imaging elements and insulators, which is applied to electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problem of reducing the amount of light received by the photoelectric conversion part, and achieve the effect of increasing the amount of light received and improving the spectral characteristics.

Inactive Publication Date: 2013-08-21
KK TOSHIBA
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, if the pixel is miniaturized, for example, there is a problem that the amount of light received by the photoelectric conversion part having a photodiode or the like decreases.

Method used

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Embodiment Construction

[0027] Embodiments of the present invention will be described below with reference to the drawings. In addition, in each figure, the same reference numerals are used for the same constituent elements, and specific descriptions are appropriately omitted.

[0028] In addition, the drawings are schematic and conceptual diagrams, and the relationship between the thickness and width of each part, the ratio of dimensions between parts, and the like are not necessarily the same as the actual ones. In addition, even when the same parts are shown, mutual dimensions and ratios may be shown differently along with the drawings.

[0029] figure 1 It is a schematic cross-sectional view showing a solid-state imaging device according to an embodiment of the present invention.

[0030] figure 2 It is a schematic cross-sectional view showing one cycle of the solid-state imaging device according to this embodiment.

[0031] picture figure 1 As shown, the solid-state imaging device 1 of thi...

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Abstract

According to one embodiment, viewed in the light incidence direction, a solid-state imaging device sequentially includes a first photoelectric conversion part, a second photoelectric conversion part, and a third photoelectric conversion part. The first structure part includes a first photoelectric conversion part which is periodically disposed in the first insulating body, has a shape corresponding with a first wavelength band and selectively absorbs light in the first wavelength band. The second structure part includes a second photoelectric conversion part which is periodically disposed in the second insulating body, has a shape corresponding with a second wavelength different from the first wavelength band and selectively absorbs light in the second wavelength band. The third structure part includes a third photoelectric conversion part which absorbs light in a third wavelength band different from the first wavelength band and the second wavelength band.

Description

[0001] (Citation of relevant literature) [0002] This application is based on and claims priority from prior Japanese Patent Application No. 2012-024095 filed on February 7, 2012, the contents of which are incorporated herein by reference. technical field [0003] Embodiments of the present invention relate to a solid-state imaging device. Background technique [0004] In recent years, the application range of solid-state imaging devices has been expanding to a wide range of mobile terminals such as digital cameras and mobile phones, surveillance cameras, and network cameras for chatting via the Internet. [0005] Examples of the solid-state imaging device include a CMOS (Complementary Metal Oxide Semiconductor: Complementary Metal Oxide Semiconductor) type area sensor, a CCD (Charge-Coupled Device: Charge-Coupled Device) type area sensor, and the like. In such a solid-state imaging device, miniaturization of pixels is required in order to achieve high resolution. [0006...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14607H01L27/14647H01L27/146
Inventor 今野有作矢吹宗冈田直忠
Owner KK TOSHIBA
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