A kind of processing method after silicon wafer rie texturing

A processing method and silicon wafer technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of the decline in the failure rate of silicon wafers, and achieve the effect of improving efficiency and sufficient cleaning

Active Publication Date: 2016-08-10
CHINT NEW ENERGY TECH (HAINING) CO LTD
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Problems solved by technology

[0006] The invention provides a treatment method for silicon wafers after RIE texturing, which has solved the defects in the existing silicon wafer cleaning process, so that the failure rate of silicon wafers has been significantly reduced

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  • A kind of processing method after silicon wafer rie texturing
  • A kind of processing method after silicon wafer rie texturing

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Embodiment Construction

[0022] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. It should be noted that components illustrated in the figures are not necessarily drawn to scale. Descriptions of well-known components and processing techniques and processes are omitted herein to avoid unnecessarily limiting the present invention.

[0023] refer to figure 1 , figure 1 Shown is a schematic flow chart of a specific embodiment of a method for treating a silicon wafer after RIE texturing according to the present invention.

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Abstract

The invention discloses a processing method for a silicon slice after RIE (Reactive Ion Etching) texturing. The processing method comprises the following steps: washing the silicon slice after RIE texturing with water; performing first acidic cleaning on the silicon slice by using first acidic solution; washing the silicon slice with water; performing second acidic washing on the silicon slice by using second acidic solution; washing the silicon slice with water; sprinkling the silicon slice; performing hot water slow pulling on the silicon slice; and drying and / or spin-drying the silicon slice. By processing the silicon slice after the RIE texturing by using the method, the reaction residual matter after surface texturing of the silicon slice can be efficiently removed without increasing the extra chemical substance, and the qualification rate of a subsequent product is improved.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, and in particular relates to a treatment method for silicon wafers after RIE texturing. Background technique [0002] After RIE (Reactive Ion Etching, Reactive Ion Etching) texturing, there will be a part of the reaction residue remaining on the surface of the silicon wafer, which will cause a decrease in the electrical performance of the battery in the subsequent process, so it is necessary to make texturing in RIE These reaction residues are then removed. [0003] The commonly used method to remove reaction residues is to prepare a mixed acid solution composed of HF and HCL in the same tank. In order to effectively control the reaction rate and make it easier to wash off the reaction residue after RIE texturing, some additional chemical substances are usually added, such as: HNO 3 , CH3COOH and / or H 2 o 2 Wait. Although the introduction of the above substances can make the cleaning ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 单伟韩玮智牛新伟蒋前哨金建波陆川仇展炜
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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