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Memory resisting layer and memory resistor

A memristor and resistive layer technology, applied in the field of microelectronics and semiconductor technology, can solve the problems of small discreteness of electrical characteristic parameters, large working voltage and working current of the memristor, and achieve superior performance, reduce operating voltage and operation. Current, the effect of improving dispersion

Active Publication Date: 2015-03-11
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is: to provide a memristor layer to overcome the technical problem in the prior art that the memristor material has a high oxygen vacancy formation energy, resulting in a large working voltage and working current of the memristor; A memristor with less discrete electrical characteristic parameters

Method used

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  • Memory resisting layer and memory resistor
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Embodiment 1

[0033] A memristive layer described in this embodiment includes a main layer and an auxiliary layer;

[0034] the auxiliary layer is located on top of the main layer;

[0035] the thickness of the main layer is greater than the thickness of the auxiliary layer;

[0036] The main layer is made of metal oxide A with resistive switching properties x1 o y1 constitute;

[0037] The auxiliary layer is made of metal oxide B x2 o y2 constitute;

[0038] Among them, x1, x2, y1, and y2 are the ratios of elements related to chemical valence.

Embodiment 2

[0040] Such as figure 2 As shown, a memristive layer described in this embodiment includes a main layer 3 and an auxiliary layer 4 . Wherein, the auxiliary layer 4 is located above the main layer 3; and the thickness of the main layer 3 is greater than the thickness of the auxiliary layer 4; the main layer 3 is made of metal oxide A with resistive properties x1 o y1 Composition; auxiliary layer 4 is made of metal oxide B x2 o y2 constitute. Among them, x1, x2, y1, and y2 are the ratios of elements related to chemical valence.

[0041] Main Layer 3 Metal Oxide A x1 o y1 and auxiliary layer 4 of metal oxide B x2 o y2 The metal elements have different valence states.

[0042] When the main layer 3 metal oxide A x1 o y1 for HfO 2 , then the metal oxide B of the auxiliary layer 4 x2 o y2 Can be Al 2 o 3 、Gd 2 o 3 or Ta 2 o 5 ; when the metal oxide A of the main layer 3 x1 o y1 for Al 2 o 3 , then the metal oxide B of the auxiliary layer 4 x2 o y2 Can be T...

Embodiment 3

[0047] A memristor described in this embodiment includes a bottom electrode layer, the above-mentioned memristor layer and a top electrode layer;

[0048] The oxygen storage capacity of the top electrode layer material is greater than the oxygen storage capacity of the bottom electrode layer material;

[0049] The bottom electrode layer and the top electrode layer are used for electrical connection with an external operating circuit;

[0050] The memristive layer is located between the bottom electrode layer and the top electrode layer.

[0051] The memristor also includes a substrate underlying the underlying bottom electrode layer.

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Abstract

The invention discloses a memory resisting layer which comprises a main layer and an auxiliary layer, wherein the auxiliary layer is arranged on the main layer. The thickness of the main layer is larger than that of the auxiliary layer. The main layer is composed of a metallic oxide Ax1Oy1 with a resistance-variation characteristic. The auxiliary layer is made of a metallic oxide Bx2Oy2, and x1, x2, y1 and y2 are element ratios relevant to chemical valences. The invention further discloses a memory resistor with low electrical characteristic parameter discreteness. The memory resisting layer is simple in structure, superior in performance, low in technology complexity and capable of saving production cost.

Description

technical field [0001] The invention relates to the technical field of microelectronics and semiconductor technology, in particular to a memristor layer and a memristor which reduce the working voltage of the memristor and improve the discreteness of the electrical characteristic parameters of the memristor. Background technique [0002] Memristor is the fourth basic circuit element independent of resistors, capacitors, and inductors. The concept of memristor was first proposed in 1971, and in 2008, Hewlett-Packard first confirmed the existence of memristor device experimentally. The memristor is a non-linear two-terminal passive device with memory function. It uses the change of resistance value to reflect the relationship between the total magnetic flux φ at both ends of the device and the amount of charge q flowing through it. dφ=Mdq, φ, q are all related to Time-correlated, which can reflect the historical state of the device, thereby realizing the memory function. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 刘力锋后羿陈冰高滨韩德栋王漪康晋锋张兴
Owner PEKING UNIV
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