Well-through type diode element or diode assembly and method for manufacturing well-through type diode element or diode assembly

Abstract

The invention relates to a method for manufacturing a well-through type diode element or diode assembly. After a well-digging mode is used for enabling the diode element or diode assembly to penetrate through a PN junction depleted / energy barrier area, a metallization manufacturing procedure is used for building two electrodes of the diode element or diode assembly on the same panel, and electrons on one electrode are guided to flow through the depleted / energy barrier area without barriers. In addition, operations such as insulation protection, metallization and long solder balls are directly carried out under the chip state, and a new CSP technique of an independent element or the diode assembly can be completed. The well-through type diode element or diode assembly has the advantages that crystalline grains are finished products, are free of connecting line, low in energy consumption, low in cost, light, thin, short, small and the like, and can effectively meet future trends and application requirements. The method can be applicable to all diode elements and relative diode assemblies, such as full-wave rectifiers and array type rectifiers extending from the diode elements.

Description

technical field [0001] The present invention relates to a semiconductor / diode element or a diode component and its manufacturing method. The two poles of the diode element are built on the same surface, and the depletion region / energy barrier region (Depletion region / Barrier region), to guide electrons to flow through the depletion / energy barrier region without barriers, is the simplest and lowest cost manufacturing method for chip-scale package (CSP, Chip-Scale Package) diodes. Background technique [0002] Diode elements generally made of semiconductor materials can be divided into axial diodes and surface-mounted diodes in terms of appearance. Whether it is axial diodes or surface-mounted diodes, the most important core material is diode crystals. In the process of manufacturing diode grains and finished diode components from semiconductor materials, the existing technology can be roughly divided into three types according to different manufacturing processes, namely ope...

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Problems solved by technology

[0017] like figure 1 As shown, no matter what kind of manufacturing process the above-mentioned prior art is, its common feature is that the P and N poles 1 and 2 are respectively constructed on the front and back sides of the diode crystal grain 3, and thus cause subsequent welding and assembly with the external electrode 4 , and many inconveniences in the manufacturing process of the molded package body 5; especially in order to meet the needs of chip-scale packaging (CSP, Chip-Scale Package), the prior art constructs the P and N poles 1 and 2 respectively on the diode grain 3 The structure of the front and back will become a great obstacle in the manufacturing technology regardless of the difficulty in the production process, materials and volume

[0018] In addition, related diode components composed of multiple diode crystals, such as full-wave rectifiers, array rectifiers, etc., because the P and N poles of the core material diode crystals are also constructed on the front and back sides, so in It is more difficult to make

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