Electrostatic discharge protection structure and semiconductor equipment

An electrostatic discharge protection and electrostatic discharge wire technology, applied in the field of electrostatic discharge protection structures and semiconductor equipment, can solve problems such as reducing product reliability, degrading components, and increasing maintenance costs, achieving a wide range of applicable locations, small parasitic capacitance, simple structure

Active Publication Date: 2016-09-28
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Electrostatic discharge (ESD, electrostatic discharge) will occur rapidly with extremely high intensity, break down semiconductor devices, or generate enough heat to melt semiconductor devices and semiconductor devices. Downgrading, or scrapping, will bring great economic losses
Therefore, electrostatic discharge will bring fatal harm to electronic products. It not only reduces the reliability of products, but also increases maintenance costs.

Method used

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  • Electrostatic discharge protection structure and semiconductor equipment
  • Electrostatic discharge protection structure and semiconductor equipment
  • Electrostatic discharge protection structure and semiconductor equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] image 3 Is a cross-sectional view of the electrostatic discharge protection structure in the first embodiment of the present invention, image 3 For the edge figure 1 A cross-sectional view of the ESD protection structure in the A-A' direction, combined with figure 1 with image 3 As shown, the electrostatic discharge protection structure is arranged between the electrostatic sensitive element 30 and the peripheral circuit 40, and the electrostatic discharge protection structure is also connected to the discharge bus; wherein the electrostatic discharge protection structure includes a first interconnect 11 and a passivation layer 12 and at least one electrostatic discharge wire 13, the first interconnection wire 11 electrically connects the electrostatic sensitive element 30 and the peripheral circuit 40, the electrostatic discharge wire 13 and the first interconnection wire 11 pass through the passivation layer 12 Isolated, and the boundary of the electrostatic discharge...

Embodiment 2

[0067] Figure 4 It is a cross-sectional view of the electrostatic discharge protection structure in the second embodiment of the present invention. Combine Figure 4 On the basis of Embodiment 1, in this embodiment, the electrostatic discharge wire 13 and the first interconnection line 11 are staggered in the longitudinal direction, and the staggered width d2 is greater than 0um and less than or equal to 2.5um, and the staggered width Within this range, d2 can produce a breakdown effect in time when static electricity comes, and then protect the electrostatic sensitive components connected to the electrostatic discharge protection structure.

Embodiment 3

[0069] Figure 5 It is a cross-sectional view of the electrostatic discharge protection structure in the third embodiment of the present invention. Combine Figure 5 On the basis of the first embodiment, the surface where the longitudinal boundary of the electrostatic discharge wire 13 is located coincides with the surface where the longitudinal boundary of the first interconnection line 11 is located. Since the surface of the longitudinal boundary of the electrostatic discharge wire 13 coincides with the surface of the longitudinal boundary of the first interconnect 11, compared with the first and second embodiments, the electrostatic discharge wire 13 is close to the first interconnect. An electrostatic discharge path L can be formed between the vertex angle of the connecting line 11 and the adjacent vertex angle of the first interconnection line 11, and the length of the electrostatic discharge path L ranges from 0.2 μm to 3 μm, so as to be able to be in the passivation layer...

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Abstract

The invention provides an electrostatic discharge protection structure which is arranged between an electrostatic sensitive element and a peripheral circuit. The electrostatic discharge protection structure is further connected with a discharge bus and comprises a first interconnecting wire, a passivation layer and at least one electrostatic discharge wire, wherein the first interconnecting wire is electronically connected with the electrostatic sensitive element and the peripheral circuit, the electrostatic discharge wire is connected with the discharge bus and insulated from the first interconnecting wire through the passivation layer, and at least one electrostatic discharge route is arranged between the electrostatic discharge wire and the first interconnecting wire. The electrostatic discharge protection structure has the advantages of being simple in structure, good in electrostatic protection effect, free of parasitic current, small in parasitic capacitance, low in noise and the like.

Description

Technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to an electrostatic discharge protection structure and semiconductor equipment. Background technique [0002] With the continuous development of liquid crystal television (LCD) technology, more and more electronic products use liquid crystal display panels as display panels. Thin film field effect transistor liquid crystal display (TFT-LCD) technology is the mainstream technology currently used. TFT-LCD The driver chip is a bridge connecting the LCD screen and the control circuit. In addition, the more commonly used process technology in today's common X-ray sensor panel (X-ray sensor panel) uses TFT (Thin Film Transistor, thin film field effect transistor) technology. [0003] Electrostatic discharge (ESD, electrostatic discharge) will occur quickly with extremely high intensity, breakdown semiconductor devices and semiconductor equipment, or generate enough heat to melt s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 郑礼朋
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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