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Nickelide source/drain structures for cmos transistors

A transistor, nickel oxide technology, applied in the field of nickel oxide source/drain structure for CMOS transistors

Active Publication Date: 2013-09-18
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, after the doping impurity is introduced, it is activated by a high-temperature activation process, and the thermal doping activation process is ineffective for materials used as channel materials in advanced technologies

Method used

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  • Nickelide source/drain structures for cmos transistors
  • Nickelide source/drain structures for cmos transistors
  • Nickelide source/drain structures for cmos transistors

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Embodiment Construction

[0033] The present invention provides a low-resistivity contact scheme for making contacts with NMOS and PMOS transistors. In some embodiments, the contact material is a metal-semiconductor ternary material that has low resistivity and is thermodynamically stable when in contact with the semiconductor material. The contact material may be a nickelide layer, which is a single crystal material after thermal annealing and may serve as source / drain regions or source / drain extension regions. For NMOS and PMOS transistors, the same nickel oxide material can be used. The single crystal phase provides controlled lateral diffusion so that the contact scheme is highly ductile and the nickel oxide material forms a smooth, sharp interface with the channel material because spiking between the materials is avoided. In one embodiment, the nickel compound material provides a reduced resistance of about 100 Ohms / sq. to 200 Ohms / sq.

[0034] In addition to the nickel compound materials formed...

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Abstract

A nickelide material with reduced resistivity is provided as source / drain contact surfaces in both NMOS and PMOS technology. The nickelide material layer may be a ternary material such as NiInAs, and may be formed from a binary material previously formed in the source / drain regions. The binary material may be the channel material or it may be an epitaxial layer formed over the channel material. The same ternary nickelide material may be used as the source / drain contact surface in both NMOS and PMOS transistors. Various binary or ternary channel materials may be used for the NMOS transistors and for the PMOS transistors. The invention provides nickelide source / drain structures for CMOS transistors.

Description

technical field [0001] The present invention relates to semiconductor devices with improved source / drain contact regions and methods of manufacturing the same. Background technique [0002] In today's rapidly developing field of semiconductor manufacturing, the level of integration increases, device components become smaller and smaller, and higher requirements are placed on improving device performance. As CMOS (Complementary Metal Oxide Semiconductor) devices shrink to smaller dimensions for future technologies, new materials and concepts must meet advanced performance requirements. [0003] CMOS technology includes NMOS (N-type metal oxide semiconductor) and PMOS (P-type metal oxide semiconductor) devices formed on the same substrate and in the same die. A key aspect of high performance in NMOS and PMOS, as well as various other devices, is device speed. For devices to operate at high speeds, they must have extremely low resistance, including extremely low contact resis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/20H01L29/24H01L21/336H01L21/8238
CPCH01L29/78681H01L21/84H01L27/1203H01L29/24H01L29/45
Inventor 查理德·肯尼斯·奥克斯兰德马克·范·达尔
Owner TAIWAN SEMICON MFG CO LTD