Preparation method of Si nanowire arrays

A nanowire array and reaction solution technology, applied in the field of preparation of Si nanowire arrays, can solve the problem that semiconductor materials cannot be mass-produced in industry, and achieve the effects of low equipment requirements, simple preparation, and good controllability.

Inactive Publication Date: 2013-10-02
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of this invention is to solve the problems that it is difficult to integrate noble metals into active devices and other semiconductor materials t

Method used

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  • Preparation method of Si nanowire arrays

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Experimental program
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Embodiment 1

[0020] 1) After cleaning the heavily doped (1 0 0) silicon wafer with a resistivity of 0.001~0.01 Ω cm by RCA method, put sulfuric acid with a mass concentration of 97% and hydrogen peroxide with a mass concentration of 30% in a volume ratio of 3:1 Soak in the mixture for 10 min. Then rinse with deionized water, and soak in 10% hydrofluoric acid buffer solution for 3 min.

[0021] 2) Mix hydrofluoric acid and silver nitrate to prepare reaction solution I, the concentration of hydrofluoric acid is 4.65 mol / L, and the concentration of silver nitrate is 0.02 mol / L; mix hydrofluoric acid and hydrogen peroxide to prepare reaction solution II, the concentration of hydrofluoric acid is 4.65 mol / L, and the concentration of hydrogen peroxide is 0.5 mol / L;

[0022] 3) Put the polished side of the silicon wafer treated in step 1) into the reaction solution I horizontally, take it out after soaking for 1 min, rinse it with deionized water, put it into the reaction solution II, react for ...

Embodiment 2

[0025] 1) After cleaning the heavily doped (1 0 0) silicon wafer with a resistivity of 0.001~0.01 Ω cm by RCA method, put sulfuric acid with a mass concentration of 97% and hydrogen peroxide with a mass concentration of 30% in a volume ratio of 3:1 Soak in the mixture for 10 min. Then the wafers were rinsed with deionized water, and soaked in 10% hydrofluoric acid buffer solution for 3 min.

[0026] 2) Mix hydrofluoric acid and silver nitrate to prepare reaction solution I, the concentration of hydrofluoric acid is 4.65 mol / L, and the concentration of silver nitrate is 0.02 mol / L; mix hydrofluoric acid and hydrogen peroxide to prepare reaction solution II, the concentration of hydrofluoric acid is 4.65 mol / L, and the concentration of hydrogen peroxide is 0.5 mol / L;

[0027] 3) Put the polished side of the silicon wafer treated in step 1) into the reaction solution I horizontally, soak for 1 min, take it out, rinse it with deionized water, put it into the reaction solution II,...

Embodiment 3

[0030] 1) After cleaning the heavily doped (1 0 0) silicon wafer with a resistivity of 0.001~0.01 Ω cm by RCA method, put sulfuric acid with a mass concentration of 97% and hydrogen peroxide with a mass concentration of 30% in a volume ratio of 3:1 Soak in the mixture for 10 min. Then rinse with deionized water, and soak in 10% hydrofluoric acid buffer solution for 3 min.

[0031] 2) Mix hydrofluoric acid and silver nitrate to prepare reaction solution I, the concentration of hydrofluoric acid is 4.65 mol / L, and the concentration of silver nitrate is 0.02 mol / L; mix hydrofluoric acid and hydrogen peroxide to prepare reaction solution II, the concentration of hydrofluoric acid is 4.65 mol / L, and the concentration of hydrogen peroxide is 0.5 mol / L;

[0032] 3) Put the polished side of the silicon wafer treated in step 1) into the reaction solution I horizontally, take it out after soaking for 1 min, rinse it with deionized water, put it into the reaction solution II, react for ...

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Abstract

The invention discloses a preparation method of Si nanowire arrays, which comprises the following steps: adopting a metal assistant chemical etching method, mixing hydrofluoric acid and silver nitrate to prepare liquid reactant I, mixing hydrofluoric acid and oxydol to prepare a liquid reactant II, carrying out a two-step reaction in the liquid reactant I and the liquid reactant II by a heavy-doping (100) type silicon chip, and etching on the heavy-doping (100) type silicon chip to gain the Si nanowire arrays. The preparation method provided by the invention is convenient and feasible; the controllability of the Si nanowire array length and the carrier concentration is excellent; the stability is sound; wavelength adjustable intermediate infrared surface plasmon resonance vibration can be acquired; the preparation method is suitable for volume production.

Description

technical field [0001] The invention relates to a preparation method of a Si nanowire array, especially a preparation method of a Si nanowire array that can be used as a mid-infrared plasmon. Background technique [0002] Surface plasmons are resonant oscillations of free electrons in metallic nanostructures. The interaction between surface charge oscillations and the electromagnetic field of light waves makes surface plasmons have many unique and meaningful optical properties, such as selective absorption and scattering of light, local electric field enhancement, and subwavelength confinement of electromagnetic waves. In recent years, with the development of nano-processing and preparation technology and theoretical simulation analysis methods, the research on the mechanism and application of surface plasmons has gradually become extensive and in-depth, making it rapidly develop into a new discipline-plasmon polaritons. Exciton photonics, and has important application pros...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L21/28C01B33/021B82Y40/00
Inventor 何海平甘露孙陆威叶志镇
Owner ZHEJIANG UNIV
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