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A mos gate plc optocoupler drive circuit and resistance loop device

A technology of optocoupler drive and resistance loop, which is applied in the direction of circuit devices, emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, etc., and can solve the problems that PLC optocouplers are affected by bypass capacitors, etc. Achieve the effect of eliminating the influence of parasitic circuit and its bypass capacitance, increasing the current and reducing the discharge time

Inactive Publication Date: 2015-12-23
STATE GRID CORP OF CHINA +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a MOS gate PLC optocoupler drive circuit and resistance loop device to eliminate the problem that the existing PLC optocoupler using MOS circuits is affected by bypass capacitors

Method used

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  • A mos gate plc optocoupler drive circuit and resistance loop device

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Embodiment Construction

[0013] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0014] MOS gate PLC optocoupler drive circuit embodiment:

[0015] The MOS gate PLC optocoupler circuit of the present invention comprises a PLC optocoupler terminal configured with a MOS gate circuit, and a resistor loop is connected in parallel at both ends of the rear stage load of the PLC optocoupler terminal, and the resistor loop consists of a switch and a resistor Composed in series.

[0016] like figure 1 As shown, K2 is the primary side control switch of the PLC optocoupler, K1 is the control switch of the subsequent load circuit, and the resistance circuit is composed of a resistor R and a switch K3 connected in series. In this embodiment, the subsequent load is a PLC optocoupler, and the switch K3 It is a knife switch, and the resistance circuit is connected in parallel at both ends of the PLC optocoupler in the rear stage. The resistance circuit...

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Abstract

The invention relates to a PLC opto-isolator driving circuit and a resistance loop device of an MOS gate. The PLC opto-isolator driving circuit comprises a PLC opto-isolator terminal equipped with an MOS gate circuit, a resistance loop is connected in parallel with the two ends of a rear-stage load of the PLC opto-isolator terminal, the resistance loop is formed by connecting a switch and a resistor in series, the resistance loop device is formed by the resistance loop, one end of a resistor is welded to one end of the switch, the other ends of the resistor and the switch are correspondingly connected to two conductive terminals of the resistance loop device, and the resistance loop device is used for being mounted at the two ends of the rear-stage load of the PLC opto-isolator terminal of the MOS gate via the conductive terminals. With the arrangement of the resistance loop, the phenomenon of transient switch-on of a PLC opto-isolator is avoided, the discharging time of an MOS gate circuit is shortened, and the influence of a parasitic circuit and a bypass capacitor of the MOS gate is eliminated.

Description

technical field [0001] The invention relates to the field of high-voltage direct current transmission control and protection, in particular to a MOS gate PLC optocoupler drive circuit and a resistance loop device. Background technique [0002] Due to the fast signal transmission speed of the MOS gate circuit, PLC optocoupler terminals designed with such MOS gates are widely used in the interface design of HVDC control and protection systems. Due to the continuous change of current caused by the opening and closing of the MOS gate, these constantly changing currents flow through the wires and printed boards, resulting in voltage changes. In the electronic design circuit of the MOS gate element, in order to ensure that the voltage of the MOS element does not change drastically with the current, a bypass capacitor is added to the MOS gate to filter out high-frequency interference signals. [0003] Due to the influence of the parasitic circuit of the MOS gate itself and the byp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02H9/00H02H9/04
Inventor 杨广羽刘敏刘高峰王清坚霍鹏飞邹卓霖
Owner STATE GRID CORP OF CHINA