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Imaging devices, methods of forming same, and methods of forming semiconductor device structures

An imaging device and imaging technology, applied in the field of photolithography technology, can solve problems such as CD uniformity shift control

Active Publication Date: 2013-10-02
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The use of such auxiliary features in conventional OPC methods can cause problems with CD uniformity (CDU) and CD shift control in both production and simulation / modelling

Method used

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  • Imaging devices, methods of forming same, and methods of forming semiconductor device structures
  • Imaging devices, methods of forming same, and methods of forming semiconductor device structures
  • Imaging devices, methods of forming same, and methods of forming semiconductor device structures

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Embodiment Construction

[0018] Imaging devices (eg, photomasks (eg, reticles)) for forming semiconductor device structures are disclosed, methods of forming the imaging devices and methods of forming semiconductor device structures are also disclosed. The imaging device may comprise at least one array pattern region and at least one attenuation region on the substrate. The at least one array pattern region may include imaged features corresponding to array features that will eventually be formed on the semiconductor device structure. In one embodiment, the at least one attenuation region may include assist features configured to at least substantially attenuate (eg, block) radiation such that corresponding features are not formed on the semiconductor device structure. In another embodiment, the at least one attenuation region may comprise assist features and at least one pixelated structure configured to at least substantially attenuate (e.g., block) radiation such that corresponding features are not...

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Abstract

An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

Description

[0001] priority claim [0002] This application claims U.S. Patent Application No. 12 / 986,836, filed January 7, 2011, "IMAGING DEVICES, METHODS OF FORMING SAME, AND METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES)” from the filing date. technical field [0003] Embodiments of the present invention relate to lithographic processes, and more particularly, to improving lithographic processes using imaging devices, methods of forming such imaging devices, and methods of forming semiconductor device structures utilizing such imaging devices. The device has an array of features and assist features that are generally of the same size and are generally spaced apart. Background technique [0004] Photomasks are commonly used to form patterns on integrated circuit wafers. As the pattern size decreases, critical dimension (CD) proximity effects become a significant problem, and methods to correct for the proximity effect problem are used. Optical proximity correction (OPC) is on...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027
CPCG03F1/54G03F1/50Y10T29/49002G03F1/38
Inventor 何元卡韦里·贾殷勾力晶张姿淑安东·J·德维利耶迈克尔·海厄特周建明斯科特·莱特丹·B·米尔沃德
Owner MICRON TECH INC