Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Phase-change memory unit and preparation method thereof

A phase-change storage and phase-change material technology, applied in the field of two-dimensional phase-change storage units and their preparation, can solve the problems of phase-change storage failure, slow operation speed, and high power consumption, and achieve the ability to increase the number of cycle operations and reduce Damage, low power effects

Active Publication Date: 2015-08-26
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a phase-change memory unit and a preparation method thereof, which are used to solve the phase-change memory problems caused by the high power consumption and slow operation speed of the phase-change memory unit in the prior art. failure problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase-change memory unit and preparation method thereof
  • Phase-change memory unit and preparation method thereof
  • Phase-change memory unit and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] see Figure 1G , the present invention provides a phase change memory cell, comprising at least: Si substrate 1, first dielectric material layer 21, lower electrode layer 31, second dielectric material layer 22, phase change material layer 4, third dielectric material layer 23 And the upper electrode layer 32.

[0081] The first dielectric material layer 21 is formed on the surface of the Si substrate; the lower electrode layer 31 is formed on the surface of the first dielectric material layer 21 .

[0082] The upper surfaces of the second dielectric material layer 22, the phase change material layer 4 and the third dielectric material layer 23 are all located on the same plane, and at the same time, the second dielectric material layer 22, the phase change material layer 4 and the third dielectric material layer The layers 23 are all formed on the lower electrode layer 31 and are in contact with the lower electrode layer 31 .

[0083] The phase-change material layer ...

Embodiment 2

[0116] like Figure 2D As shown, the present invention provides a phase-change memory cell, which at least includes: a Si substrate 1 , a second dielectric material layer 22 , an electrode pair 5 , a phase-change material layer 4 and a third dielectric material layer 23 . in, Figure 2D It is a schematic structural diagram of a phase change memory cell in this embodiment.

[0117] The second dielectric material layer 22 is formed on the surface of the Si substrate 1 . Wherein, the second dielectric material layer 22 is an oxygen-free semiconductor dielectric material, at least including any one of gallium nitride, germanium nitride or silicon nitride. In this embodiment it is silicon nitride.

[0118] The electrode pair 5 is formed on the surface of the second dielectric material layer 22 , and two electrodes in the electrode pair 5 have a first distance and are separated from each other. Wherein, the range of the first distance is 10-100 nanometers, in this embodiment, pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Provided are a phase change memory unit and a preparation method therefor. A phase change material layer with the thickness equivalent to the size of a single unit cell is used, so that a phase change material basically reflects an interface characteristic and weakens a material characteristic, so as to prepare a high-density, low-power-consumption, high-speed two-dimensional phase change memory unit for storing information by using an interface resistance change. Because the phase change material layer is thin in thickness, and there are a small number of defects on the phase change material layer, the operation power consumption of the phase change memory unit is reduced and the operation time is shortened, the damage to the phase change material in each operation process is reduced, so that the element segregation effect on the material during each operation is reduced, and the maximum operational number of times of the phase change memory unit is increased, thereby being beneficial to improve the capability of the number of times of loop operation of a device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a phase-change memory unit and a preparation method thereof, in particular to a two-dimensional phase-change memory unit with high density, low power consumption and high speed and a preparation method thereof. Background technique [0002] Phase Change Random Access Memory (PCRAM) uses operating signals to generate Joule heat to operate phase change materials to make them transition between different phases, thereby reflecting the difference in high and low resistance values ​​and completing the storage of information. Phase-change memory is considered to be the most promising next-generation non-volatile memory due to its fast operation speed, good data retention, strong cycle operation capability, compatibility with traditional CMOS processes, and ability to maintain its operational performance in small sizes. one of the memory. [0003] Phase change material is the inf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH01L45/1675H01L45/1616H01L45/06H01L45/124H01L45/1226H01L45/144H10N70/823H10N70/8265H10N70/8413H10N70/231H10N70/023H10N70/8828H10N70/063H10N70/841H10N70/884
Inventor 宋志棠任堃饶峰宋三年陈邦明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com