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Apparatus and method for measuring thermal diffusivity

A thermal diffusivity and heat-driven technology, applied in Raman scattering, material excitation analysis, etc., can solve the problems that the spatial resolution cannot be less than 250nm, and the multilayer film cannot be measured, and achieve the effect of less requirements

Active Publication Date: 2013-10-23
IND TECH RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, due to the optical diffraction limit, the spatial resolution cannot be less than 250nm, and only the outermost layer of the film can be measured, and multilayer films cannot be measured

Method used

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  • Apparatus and method for measuring thermal diffusivity
  • Apparatus and method for measuring thermal diffusivity
  • Apparatus and method for measuring thermal diffusivity

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0070] Piece to be tested (film / substrate to be tested): diamond-like carbon film (DLC, 180nm) / Si(100) substrate

[0071] Raman spectrometer: High-resolution confocal Raman Microscope (Lab RAM HR Raman Microscope, HOROBA), HeNe laser: wavelength 632.8nm, power: 20mW; magnification: objective lens 100X, aperture 0.9; resolution: focal length division 1μm.

[0072] Heating equipment: near-infrared light heating unit, the temperature control range is 50℃~82℃.

[0073] The piece to be tested is placed on the platform, and the Raman spectrum of the piece to be tested is measured by a Raman spectrometer. At this time, a wave peak at Raman shift (Raman shift) is 519.12cm -1 The location of and another peak in the Raman shift is about 1550cm -1 s position. At Raman shift (Raman shift) is 519.12cm -1 The peak at the position represents the signal of Si, and the Raman shift (Raman shift) is 1550cm -1 The position of the peak represents the DLC signal.

[0074] Next, a near-infrare...

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Abstract

An apparatus for measuring thermal diffusivity includes a Raman spectroscope, a heating device, and a signal analyzing unit. The Raman spectroscope is utilized to measure a Raman scattering intensity of different sites of a film to be measured. The heating device is utilized to provide a controllable thermal driving wave. The signal analyzing unit is utilized to analyze the Raman scattering intensity from the Raman spectroscope and the thermal driving wave so as to evaluate the thermal diffusivity of the film to be measured.

Description

technical field [0001] The invention relates to a device for measuring thermal diffusivity and a measuring method thereof, and in particular to a device for measuring the thermal diffusivity of a multilayer film in nanometer scale and a measuring method thereof. Background technique [0002] In the study of thermal diffusion properties of materials, thermal diffusion properties can be calculated by applying thermal energy to one end of the material and measuring the temperature at the other end. However, when the scale of the material is as small as the nanometer scale, the previous direct measurement method is no longer applicable. [0003] The current methods for measuring the thermal diffusion properties of thin films include: flash method, 3ω method, Ac calorimetric method, modulated laser technique, instant phase image method (instantaneous phase portrait method) And traveling wave method (traveling wave method) and so on. However, these measurement methods are mainly...

Claims

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Application Information

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IPC IPC(8): G01N21/65
CPCG01N21/65
Inventor 施智超吴金宝吕明生
Owner IND TECH RES INST
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