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Transistors and methods of forming them

A technology of transistors and semiconductors, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as limited mobility, achieve the effect of reducing lattice dislocation and improving mobility

Active Publication Date: 2016-03-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing method of forming a silicon germanium strained layer in the channel region is limited to improve the mobility of carriers in the channel region.

Method used

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  • Transistors and methods of forming them
  • Transistors and methods of forming them
  • Transistors and methods of forming them

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Embodiment Construction

[0042] In the existing silicon germanium strained layer formed in the channel region, due to the lattice mismatch between germanium in the silicon germanium strained layer and silicon in the semiconductor substrate, lattice dislocation easily occurs between the silicon germanium strained layer and the semiconductor substrate , thereby affecting the mobility of carriers in the channel region.

[0043] For this reason, the inventor proposes a transistor and its forming method, wherein the forming method of the transistor includes: providing a semiconductor substrate; forming a groove in the semiconductor substrate; forming a carbon-containing silicon in the groove Germanium strained layer; forming a gate structure on the carbon-containing silicon germanium strained layer. A carbon-containing silicon-germanium strained layer is formed in the channel region. Since carbon atoms are much smaller than silicon atoms and germanium atoms, carbon atoms will compensate for the lattice mis...

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Abstract

Provided are a transistor and a method for forming the same. The method for forming the transistor comprises: providing a semiconductor substrate, forming a groove in the semiconductor substrate, forming a carbon-containing silicon germanium strained layer inside the groove, and forming a grid structure on the carbon-containing silicon germanium strained layer. By adopting the method provided by the embodiment of the invention, the mobility of carriers in a channel region is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a transistor and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration in order to achieve higher computing speed, larger data storage capacity, and more functions. Therefore, , the gates of complementary metal oxide semiconductor (ComplementaryMetalOxideSemiconductor, CMOS) transistors are becoming thinner and shorter than before. In order to obtain better electrical performance, it is usually necessary to improve the performance of semiconductor devices by controlling the carrier mobility. [0003] An existing method for improving carrier mobility in the channel region is to form a silicon germanium strained layer in the channel region of the transistor. The specific process includes: providing a semicond...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/10
Inventor 禹国宾
Owner SEMICON MFG INT (SHANGHAI) CORP