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Flash memory and manufacturing method thereof

A technology of flash memory and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as increased leakage, dislocation of flash memory, etc., to reduce lattice dislocation, reduce stress, Effect of Reducing Leakage Current

Pending Publication Date: 2022-03-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The object of the present invention is to provide a kind of flash memory and its manufacturing method, to solve the problem that the bit error that occurs in the flash memory, electric leakage increase

Method used

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  • Flash memory and manufacturing method thereof
  • Flash memory and manufacturing method thereof

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Embodiment Construction

[0028] The flash memory and its manufacturing method proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0029] figure 1 It is a schematic flow chart of the manufacturing method of the flash memory provided by the present invention. Such as figure 1 As shown, the manufacturing method of the flash memory includes:

[0030] Step S1: providing a substrate on which a floating gate structure layer is formed;

[0031] Step S2: sequentially etching the floating gate structure layer and the substrate to form an isolation trench, the angle between the side wall and the...

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Abstract

According to the flash memory and the manufacturing method thereof provided by the invention, the angle between the bottom wall and the side wall of the isolation groove formed in the substrate is 98-102 degrees, so that the contact surface between the shallow groove isolation structure and the substrate can be increased, and meanwhile, the effective supporting volume of the substrate can be increased; the stress borne in unit volume is reduced, so that the lattice dislocation of the substrate is reduced, and the leakage current in the flash memory is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a flash memory and a manufacturing method thereof. Background technique [0002] In the process of the flash memory, the quality of the shallow trench isolation structure (Shallow trench isolation, STI) in the flash memory determines the basic electrical performance of the flash memory. With the rapid development of semiconductor manufacturing technology, the feature size of flash memory has been significantly reduced. In order to achieve higher circuit density, not only the feature size of flash memory has been reduced, but also the size of the shallow trench isolation structure in flash memory will also correspond to shrinking. The shallow trench isolation structure is composed of a trench in the substrate and an oxide filled in the trench. However, in practical applications, it is found that the angle between the side wall and the bottom wall of the trench i...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11521H01L21/762H10B41/30
CPCH01L21/76224H10B41/30
Inventor 程江伟
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP