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UV light-emitting diode

a light-emitting diode and ultraviolet light technology, applied in the field of ultraviolet light-emitting diodes, can solve problems such as mismatch between layers of lattices, achieve the effects of reducing stress, reducing lattice dislocations and lattice defects, and increasing the number of layers

Active Publication Date: 2019-07-11
EPILEDS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention is about an UV light-emitting diode that includes a patterned substrate, a template layer, a growth layer, and multiple layers of multiple quantum wells. The invention utilizes the patterned substrate to reduce stress between the substrate and the template layer, which reduces lattice dislocations and defects, and increases the number of layers in the diode. The invention also utilizes the intrinsic semiconductor layer to reduce electron moving velocity, and matches with the electron blocking layers to increase luminous efficiency. Overall, the invention has improved performance and efficiency of UV light-emitting diodes.

Problems solved by technology

Due to the aluminum content between the foregoing layers not being uniform, a lattice mismatch between the layers is caused.

Method used

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Embodiment Construction

[0027]Exemplary embodiments of the present invention are described herein in the context of an UV light-emitting diode.

[0028]Those of ordinary skilled in the art will realize that the following detailed description of the exemplary embodiment(s) is illustrative only and is not intended to be in any way limiting. Other embodiments will readily suggest themselves to such skilled persons having the benefit of this disclosure. Reference will now be made in detail to implementations of the exemplary embodiment(s) as illustrated in the accompanying drawings. The same reference indicators will be used throughout the drawings and the following detailed description to refer to the same or like parts.

[0029]Herein, the stacking relationship between a patterned substrate 10 and a template layer 20 will be described first, and it will be described with reference to FIG. 1, which is a patterned substrate view of a first embodiment of an UV light-emitting diode of the present invention. Wherein, a...

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Abstract

An UV light-emitting diode includes a patterned substrate, a template layer, a growth layer, a first n-type semiconductor layer, an intrinsic semiconductor layer, a second n-type semiconductor layer, a plurality of layers of multiple quantum wells, a barrier layer, a first electron blocking layer, a second electron blocking layer, a first p-type semiconductor layer and a second p-type semiconductor layer in sequence from a bottom layer to a top layer. Whereas the aforementioned layers all include Group III nitride materials and the number of layers for the plurality of layers of multiple quantum wells is at least five layers. Because the first n-type semiconductor layer, the first p-type semiconductor layer, and the plurality of layers of multiple quantum wells all contain aluminum, short-wavelength UV light is emitted when a current is applied.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority from Taiwan Patent Application No. 107200371, filed on Jan. 9, 2018, in Taiwan Intellectual Property Office, the contents of which are hereby incorporated by reference in their entirety for all purposes.BACKGROUND OF THE INVENTIONField of the Invention[0002]The present invention relates to a light-emitting element, and more particularly to an UV (Ultra Violet) light-emitting diode which emits light in the UV wavelength region.Description of Related Art[0003]Recently, with the rise of environmental awareness and the enforcement of the treaty banning mercury lamps, it is imperative to develop other light sources that can replace mercury lamps, wherein, a UV light-emitting diode which replaces the UV light mercury lamps are highly expected. However, the luminous efficiency of UV light-emitting diodes is actually not as high as imagined. Scholars and manufacturers are constantly researching how to enhance the l...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/06H01L33/32H01L33/14
CPCH01L33/06H01L33/145H01L33/32H01L33/007H01L33/20H01L21/0254H01L21/02458H01L21/0242H01L21/0243
Inventor HSU, KUNG-HSIEHHSU, MING-SEN
Owner EPILEDS TECH