Thin film transistor, manufacturing method thereof, array substrate and display

Abstract

The invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display, and aims at solving the problem that the thin film transistor generates leakage current due to a reason that the semiconductor active layer is influenced by illumination. The thin film transistor comprises a source, a drain, a semiconductor active layer, a grid insulating layer and a grid. The thin film transistor further comprises a visor is arranged between the source and the drain. The visor obstructs the source from the drain. Besides, the visor is arranged on the side of the incident light of the semiconductor active layer and is used for obstructing the incident light from irradiating the semiconductor active layer.

Description

technical field [0001] The invention relates to the technical field of displays, in particular to a thin film transistor, a manufacturing method thereof, an array substrate and a display. Background technique [0002] figure 1 It is a schematic structural diagram of a bottom-gate thin film transistor (Thin Film Transistor, TFT) in the prior art, and the thin film transistor includes: a gate 60 formed on a base substrate 10, a gate insulating layer 70, a source 20, and a drain 30 . The semiconductor active layer 40 and the protective layer 90 . The array substrate containing thin film transistors also includes a passivation layer 50 and a pixel electrode 80 . The gate 60 of the bottom-gate thin film transistor can block the light from the backlight, and prevent the semiconductor active layer 40 from being illuminated by the backlight to cause leakage current of the thin film transistor. In order to avoid the impact of water and oxygen in the external environment on the sem...

AI Technical Summary

Problems solved by technology

exist figure 2 In the shown top-gate thin film transistor, the gate 600 can block the influence of external light on the semiconductor active layer 400, the drain 200 and the source 300 are disconnected, and the light from the backlight can pass through the transparent substrate 100 The semiconductor active layer 400 is irradiated, and the semiconductor active layer 400 is in contact with the drain electrode 200, and at the same time, the semiconductor active layer 400 is in contact with the source electrode 300, and the semiconductor active layer 400 will connect the drain electrode 200 and the source electrode 300 turns on, causing the thin film transistor to generate leakage current

[0003] To sum up, the top-gate thin film transistors in the prior art are susceptible to leakage current due to the influence of the backlight

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