Thin film transistor, manufacturing method thereof, array substrate and display
A technology of thin film transistors and manufacturing methods, which is applied in the direction of transistors, electric solid-state devices, semiconductor devices, etc., can solve the problems of leakage current and generation of leakage current of thin film transistors, and achieve the effect of high stability characteristics
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[0043] In the specific embodiment of preparing the reflective source electrode, the reflective drain electrode and the metal oxide IGZO semiconductor active layer, the following two implementation schemes are included:
[0044] Option one, in Figure 7 On the basis of, dry etching is used to etch all the metal oxide IGZO semiconductor active layer without photoresist coverage. As the dry etching progresses, the thickness of the photoresist is also reduced accordingly. The thickness of the photoresist 41 covering the region of the metal oxide IGZO semiconductor active layer 102 is relatively thin, and the thickness of the photoresist 42 covering the region of the metal oxide IGZO semiconductor active layer 103 is relatively thick. When the photoresist covering the 102 area is completely etched away to expose the metal oxide IGZO semiconductor active layer, when the dry etching continues at this time, the metal oxide IGZO in the metal oxide IGZO semiconductor active layer 102 area ...
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