Unlock instant, AI-driven research and patent intelligence for your innovation.

Electrode body, wiring substrate, and semiconductor device

一种布线基板、半导体的技术，应用在半导体器件、半导体/固态器件制造、半导体/固态器件零部件等方向，能够解决降低荷重、突起结晶组织塑性变形等问题，达到降低荷重的效果

Inactive Publication Date: 2013-10-23
OLYMPUS CORP
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the method described in Japanese Patent Application Laid-Open No. 2001-267371 has a problem that the protruding crystal structure may be plastically deformed by pressing, and the effect of reducing the load may not be sufficiently obtained.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrode body, wiring substrate, and semiconductor device
  • Electrode body, wiring substrate, and semiconductor device
  • Electrode body, wiring substrate, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] refer to Figure 1 to Figure 8 , an embodiment of the present invention will be described.

[0031] figure 1 It is a perspective view showing the electrode formation body 1 of this embodiment. The electrode forming body 1 has a plate-shaped or sheet-shaped base material 10 and a plurality of electrode parts 20 formed on the surface of the base material 10 .

[0032] The base material 10 is formed of an insulator or a semiconductor into a plate shape or a sheet shape with a predetermined thickness. Examples of the insulator and semiconductor constituting the base material 10 include silicon, resin, ceramics, glass, and the like. In this embodiment, a silicon wafer is used as the base material 10 .

[0033] figure 2 It is an enlarged cross-sectional view showing the electrode portion 20 of the electrode forming body 1 . Each electrode portion 20 is formed so as to protrude from the surface of the base material 10 , and has a substantially cylindrical base protrusio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an electrode body, a wiring substrate, and a semiconductor device. The electrode body is provided as an electrode body capable of appropriately reducing a load when silicon wafer direct bonding is performed. The electrode body (1) includes a base member (10) that has a predetermined thickness; and an electrode portion (20) that is formed on one surface of the base member in a thickness direction thereof. In the electrode body (1), the electrode portion (20) includes a basic bump (21) formed in a substantially columnar shape to protrude on the base member (10) and a fragile bump (22) formed independently from the basic bump (21) to form a metallic bond with the basic bump.

Description

technical field [0001] The present invention relates to an electrode forming body, and more specifically, to an electrode forming body in which a plurality of electrodes are protrudingly formed on a substrate, a wiring board and a semiconductor device using the electrode forming body. [0002] this application claims priority to Japanese Patent Application No. 2012-082930 for which it applied on March 30, 2012, and uses the content here. Background technique [0003] In order to achieve higher functionality and miniaturization of the system, smaller and higher-performance semiconductor devices are required, and research has been conducted on a method called "silicon wafer direct bonding" in which a plurality of tiny The raised wafers are bonded to each other. [0004] In direct bonding of silicon wafers, a load must be applied to the wafer in order to electrically connect bumps, and the necessary load increases as the number of bumps increases. For example, when protrusion...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L21/60
CPCH01L2924/0002H01L23/49811H01L21/563H01L24/11H01L24/13H01L24/14H01L24/16H01L24/81H01L24/83H01L2224/11318H01L2224/1132H01L2224/1145H01L2224/1146H01L2224/1147H01L2224/1184H01L2224/11845H01L2224/119H01L2224/11901H01L2224/13005H01L2224/13018H01L2224/13023H01L2224/13078H01L2224/13082H01L2224/131H01L2224/13111H01L2224/13144H01L2224/13147H01L2224/13155H01L2224/1403H01L2224/141H01L2224/16238H01L2224/73204H01L2224/81012H01L2224/81013H01L2224/81022H01L2224/81191H01L2224/81203H01L2224/83104H01L2924/00014H01L2924/014H01L2924/00012H01L2224/113
Inventor 右田千裕菊地广竹本良章
Owner OLYMPUS CORP