Backside-illuminated image sensor and manufacturing method thereof
An image sensor and back-illuminated technology, applied in the field of image sensors, can solve problems such as signal crosstalk, poor quality, image sharpness reduction, etc., and achieve the effect of reducing mutual crosstalk
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no. 1 example
[0051] The first embodiment: Please refer to the accompanying drawings:
[0052] Such as figure 2 As shown, a silicon wafer layer 1 comprising a plurality of pixel units is provided, each pixel unit includes a photodiode 101 and a plurality of transistor circuits 102, and the silicon wafer layer 1 has a front surface opposite to outgoing light and a back surface opposite to receiving incident light ;
[0053] The back end layer 2 is fabricated by thermal oxidation process or semiconductor process deposition.
[0054] First, if figure 2 As shown, the first dielectric layer 2011 is deposited and formed on the front surface of the silicon wafer layer 1. After the planarization process, it is deposited on the side of the first dielectric layer 2011 away from the silicon wafer layer 1 to completely cover the first dielectric layer. The light-absorbing layer 202 of the electrical layer 2011 can be deposited by chemical vapor deposition or physical vapor deposition, etc., planar...
no. 2 example
[0055] Second embodiment: as shown in FIG. 4 , the steps in this embodiment are basically the same as those in the first embodiment, the difference is that: the first dielectric layer 2011 is deposited on the side away from the silicon wafer layer 1 to form a complete covering After the light-absorbing layer 202 of the first dielectric layer 2011, the light-absorbing layer 202 corresponding to the non-photosensitive region of the silicon wafer layer 1 is etched to expose the first dielectric layer 2011, and the corresponding light-absorbing layer 202 only corresponds to the silicon wafer layer 1. In the photosensitive area, the area of the cross section of the light absorbing layer 202 is not smaller than the area of the cross section of the photodiode 101 .
no. 3 example
[0056] The third embodiment: as image 3 As shown, first, the light absorbing layer 202 is deposited and formed on the front surface of the silicon wafer layer 1, and the relevant area is imaged through a mask, and the light absorbing layer 202 corresponding to the non-photosensitive area of the silicon wafer layer 1 is etched to expose the silicon wafer layer 1; and then correspondingly deposited to form the layer of the first medium 2011 covering the light-absorbing layer, through the through-hole process and deposited conductive material to form the conductive layer 203; after that, a multi-layer conductive layer 204 structure can be formed accordingly, especially according to the specific Different processes can be deposited outside the second dielectric layer 2012 to make multi-layer dielectric layers such as the third dielectric layer and the fourth dielectric layer to meet the needs of specific image sensors. In the above steps, the first dielectric layer The layer 20...
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