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Sputter device and method for depositing thin film using the same

A sputtering equipment and a technology for film deposition, which are applied in the field of sputtering equipment and film deposition using the sputtering equipment, and can solve problems such as incompatibility

Inactive Publication Date: 2013-11-13
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, methods using conventional sputtering equipment are not suitable for double-layer deposition, single-layer deposition, or in less than The deposition rate of the dopant material

Method used

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  • Sputter device and method for depositing thin film using the same
  • Sputter device and method for depositing thin film using the same
  • Sputter device and method for depositing thin film using the same

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Embodiment Construction

[0021] In the following detailed description, certain exemplary embodiments are shown and described by way of illustration. As those skilled in the art will realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the inventive concept.

[0022] It should be noted that the drawings are schematic and do not illustrate precise dimensions. In the drawings, for clarity and convenience, the relative proportions and ratios of the elements in the drawings may be exaggerated or reduced in size, and such arbitrary ratios are only illustrative and not limited in any way. Similar reference numerals are used for similar structures, elements or parts shown in two or more drawings to show similar features. When a part is considered to be "above" or "above" another part, the one part may be directly above the other part, or may be accompanied by another part between them.

[0023] In the following, we will refer to figure 1 ...

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Abstract

A sputter device includes a cathode portion including a target support portion coupled to a front surface of a cathode main body, a target being mounted on the front surface of the cathode main body and being supported by the target support portion, an anode portion including an anode coupled to an anode main body, the anode main body surrounding a side and a bottom of the cathode portion, and the anode covering the target support portion and an edge of the target, an internal insulator between the cathode portion and the anode main body, an electrode insulator between the anode and each of the target support portion and the edge of the target, and a power source portion connected to the cathode portion and the anode portion.

Description

Technical field [0001] Exemplary embodiments relate to a sputtering device and a thin film deposition method using the sputtering device. More specifically, exemplary embodiments relate to a sputtering apparatus having a diode sputtering deposition source that does not use a magnet, and to a thin film deposition method using the sputtering apparatus. Background technique [0002] The deposition source of the conventional sputtering equipment controls the magnetic field by placing a magnetic substance under the target. The magnetic substance increases the charge density in the position close to the target surface to increase the deposition efficiency, and improves the quality by increasing the energy of the particles deposited to the target. However, the method using conventional sputtering equipment is not suitable for double layer deposition, single layer deposition, or less than The deposition rate of the doped material. [0003] The above-mentioned information disclosed in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/34C23C14/564H01J37/32532H01J37/34
Inventor 郑胤谟郑贞永朴钟力徐晋旭
Owner SAMSUNG DISPLAY CO LTD