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Detection method for falling-off of in-grid lead wires of enhanced type power MOS (Metal Oxide Semiconductor) devices

A MOS device and detection method technology, which is applied in the field of microelectronics, can solve the problems of long time consumption and large error of measurement results, and achieve the effects of high efficiency, short measurement time consumption and easy operation

Active Publication Date: 2013-11-27
陕西半导体先导技术中心有限公司
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Problems solved by technology

The shortcomings of this patent application are that the ambient temperature affects the infrared imaging of the device, and the measurement results have large errors; it is necessary to build an experimental platform device, which takes a long time

Method used

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  • Detection method for falling-off of in-grid lead wires of enhanced type power MOS (Metal Oxide Semiconductor) devices

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Embodiment Construction

[0023] Attached below figure 1 , to further describe the method of the present invention.

[0024] Step 1, check the appearance of the device.

[0025] Check the appearance of the enhanced power MOS device to be tested, observe whether there is physical damage on the surface of the enhanced power MOS device, remove the enhanced power MOS device with physical damage on the surface, and obtain an enhanced power MOS device with a good surface.

[0026] The physical damage on the surface of the enhanced power MOS device refers to the phenomenon of burn marks on the surface of the device, incomplete pins and leads, or serious deformation of the package. Devices with physical damage on the surface have degraded or even failed in function, and this type of device will interfere with the judgment of lead-off in the gate. Therefore, enhancement mode power MOS devices with physical damage on the surface should be removed.

[0027] Step 2, "two-wire method" to measure the threshold vo...

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Abstract

The invention discloses a detection method for the falling-off of in-grid lead wires of enhanced type power MOS (Metal Oxide Semiconductor) devices. The detection method comprises the specific steps of (1) detecting the appearance of devices to obtain devices with complete surfaces; (2) measuring threshold voltage of the devices by a two-line method; (3) judging whether other damages exist or not and removing devices with other inner damages; (3) measuring threshold voltage of the remained devices by a three-line method; and (5) judging whether in-grid lead wires fall off or not. The detection method disclosed by the invention adopts the two-line method and the three-line method to measure the threshold voltage of the enhanced type power MOS devices, and whether the in-grid lead wires of the enhanced type power MOS devices fall off or not is judged according to a measured result. The detection method disclosed by the invention has the advantages of simplicity in operation, short measurement time, low cost and high efficiency.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and further relates to a detection method for the detachment of leads in the grid of an enhanced power MOS device in the field of semiconductor device detection. The present invention can measure the threshold voltage of the enhanced power MOS device through the "two-wire method" and "three-wire method" to determine whether the inner lead wire of the enhanced power MOS device falls off. Background technique [0002] At present, the existing detection methods for the detachment of lead wires in the grid of enhanced power MOS devices are mainly divided into two categories: the first is the method of ultrasonic scanning, which uses ultrasonic beams to irradiate the surface of the device under test, and receives the detection method on the internal reference interface of the device under test. The reflected waveform signal is based on the reflected wave waveform signal to judge the bonding s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/61G01R31/26
Inventor 游海龙赵杨杨贾新章顾铠刘鹏
Owner 陕西半导体先导技术中心有限公司
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