Method for measuring nucleation reversible electric domain polarization intensity of ferroelectric film

Abstract

The invention belongs to the technical field of solid dielectric medium application and particularly relates to a method for measuring the nucleation reversible electric domain polarization intensity of a ferroelectric film. After voltages with different pulse widths are applied from the electric domain polarization direction of the pre-polarized ferroelectric film to the anti-parallel direction of applied voltage, ferroelectric capacitor discharge charge surface densities and reversal electric domain polarization intensities of the ferroelectric film are measured when different ferroelectric capacitor voltages are applied; after voltages with different pulse widths are applied from the electric domain polarization direction of the pre-polarized ferroelectric film to the parallel direction of applied voltage, ferroelectric capacitor discharge charge surface densities are measured when different ferroelectric capacitor voltages are applied; finally, the nucleation reversible electric domain polarization intensity of the ferroelectric film can be calculated. The method can be adaptable to various conditions, is high in measurement accuracy, brings convenience to a user for looking into the dynamics mechanism of the nucleation electric domain growth motion of the ferroelectric film and can be applied to novel devices such as a device with ultrahigh dielectric response performance.

Description

technical field [0001] The invention belongs to the technical field of solid-state dielectric applications, and in particular relates to a method for measuring the polarization intensity of a ferroelectric thin film nucleating reversible domain. Background technique [0002] Ferroelectric materials have high spontaneous polarization and large dielectric constant and can be used in high-precision infrared detectors, high-dielectric capacitors, microwave devices with electric field modulation, phase shifters and energy harvesting systems, etc. With the improvement of the integration density of modern electronic circuits and devices, the size of device units has been greatly reduced, and the size effect of ferroelectric materials has become more and more obvious; at the same time, these devices require ferroelectric materials to have higher dielectric responses to improve the sensitivity of related devices , conversion efficiency and other technical indicators. [0003] The el...

AI Technical Summary

Problems solved by technology

However, the current commercial ferroelectric testers, such as Radiant Premier I / II and aixACCT TF2000 analyzer, are based on the improved Virtual Ground or Sawyer-Tower circuit, by applying a series of AC signals below 1 megahertz (MHz) to the ferroelectric film , and then test the ferroelectric thin film P-V Hysteresis loops, these methods are difficult to measure the polarization intensity of the nucleation reversible domain, and cannot effectively control the change of the polarization intensity, which makes the nucleation reversible domain characteristics difficult to be practically applied

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