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Magnetoresistive thin film and its manufacturing method

A manufacturing method and magnetoresistance technology, applied in the field of magnetic sensors, can solve the problems of poor stability and occupation of information storage devices, and achieve the effects of improving the relative change rate of anisotropic magnetoresistance, increasing the relative change rate, and aligning crystal grains neatly.

Active Publication Date: 2016-08-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, due to the poor stability of the information storage device made of the giant magnetoresistance film, the information storage device made of the traditional anisotropic magnetoresistance film still occupies the mainstream market.

Method used

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  • Magnetoresistive thin film and its manufacturing method
  • Magnetoresistive thin film and its manufacturing method
  • Magnetoresistive thin film and its manufacturing method

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Embodiment Construction

[0037] The relative rate of change of the anisotropic magnetoresistance of the existing magnetoresistance thin film is relatively low. Through the research on the formation process of the magnetic material layer in the anisotropic magnetoresistance, it is found that the orderly degree of crystal grain arrangement in the magnetic material layer is related to that of the magnetic material. The roughness of the layer growth surface is related to:

[0038] The rougher the growth surface of the magnetic material layer is, the more irregular the grain arrangement of the magnetic material layer is. The more irregular the arrangement of the magnetic material layer is, the easier it is to reduce the relative change rate of the anisotropic magnetoresistance of the magnetic material layer.

[0039] Therefore, reducing the roughness of the growth surface of the magnetic material layer is beneficial to the regular arrangement of crystal grains in the magnetic material layer, thereby increa...

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Abstract

A method for making a magnetoresistive film, which includes forming an insulating material layer on a substrate; forming a trench in the insulating material layer; forming a first barrier layer at the bottom and sidewalls of the trench and on the surface of the insulating material layer; Form a second barrier layer on the first barrier layer, the thickness of the second barrier layer is less than the thickness of the first barrier layer; form a magnetic material layer on the second barrier layer; anneal the magnetic material layer processed to form the magnetoresistive film. In addition, the present invention also provides a magnetoresistive film, which includes: an insulating material layer provided with grooves, first and second barrier layers and a magnetic material layer sequentially arranged on the insulating material layer. The technical solution of the present invention has the following advantages: the surface of the second barrier layer is smoother, which is beneficial to the subsequent formation of the magnetic material layer, making the grain arrangement of the magnetic material layer more regular, thereby improving the various properties of the magnetoresistive film. Relative rate of change of anisotropic magnetoresistance.

Description

technical field [0001] The invention relates to the field of magnetic sensors, in particular to a magnetoresistance thin film and a manufacturing method thereof. Background technique [0002] Magnetoresistive thin films are widely used in various random access memories, read heads, and magnetic sensors. In these devices, the information storage density depends largely on the properties of the magnetoresistive film. [0003] The magnetoresistance effect (Magneto Resistance, MR) refers to the phenomenon that the resistance of a substance changes with the change of the external magnetic field. Nowadays, the most common magnetoresistance films using the magnetoresistance effect are mainly giant magnetoresistance (Giant Magneto Resistance, GMR) and anisotropic magnetoresistance (Anisotropic MagnetoResistance, AMR). However, due to the problem of poor stability of the information storage device made of the giant magnetoresistance film, the information storage device made of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/08H10N50/01H10N50/10
Inventor 赵波刘玮荪
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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