Magnetoresistive thin film and its manufacturing method

A manufacturing method and magnetoresistance technology, applied in the field of magnetic sensors, can solve the problems of poor stability and occupation of information storage devices, and achieve the effects of improving the relative change rate of anisotropic magnetoresistance, increasing the relative change rate, and aligning crystal grains neatly.

Active Publication Date: 2016-08-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor stability of the information storage device made of the giant magnetoresistance film, the information storage device made of the traditional anisotropic magnetoresistance film still occupies the mainstream market.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetoresistive thin film and its manufacturing method
  • Magnetoresistive thin film and its manufacturing method
  • Magnetoresistive thin film and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The relative rate of change of the anisotropic magnetoresistance of the existing magnetoresistance thin film is relatively low. Through the research on the formation process of the magnetic material layer in the anisotropic magnetoresistance, it is found that the orderly degree of crystal grain arrangement in the magnetic material layer is related to that of the magnetic material. The roughness of the layer growth surface is related to:

[0038] The rougher the growth surface of the magnetic material layer is, the more irregular the grain arrangement of the magnetic material layer is. The more irregular the arrangement of the magnetic material layer is, the easier it is to reduce the relative change rate of the anisotropic magnetoresistance of the magnetic material layer.

[0039] Therefore, reducing the roughness of the growth surface of the magnetic material layer is beneficial to the regular arrangement of crystal grains in the magnetic material layer, thereby increa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

A production method of a magnetoresistance film includes forming an insulating material layer on a substrate; forming a trench in the insulating material layer; forming a first barrier layer on the bottom and the side wall of the trench as well as the surface of the insulating material layer; forming a second barrier layer, with the thickness smaller than that of the first barrier layer, on the first barrier layer; forming a magnetic material layer on the second barrier layer; performing annealing treatment on the magnetic material layer to form the magnetoresistance film. Besides, the invention further provides the magnetoresistance film. The magnetoresistance film comprises the insulating material layer with the trench, and the first barrier layer, the second barrier layer and the magnetic material layer arranged on the insulating material layer in sequence. The production method and the magnetoresistance film have the advantages that the second barrier layer is smoother in surface, so that subsequent formation of the magnetic material layer is benefited, crystal grain arrangement of the magnetic material layer is more regular, and further relative change rate of anisotropic magnetoresistance of the magnetoresistance film is increased.

Description

technical field [0001] The invention relates to the field of magnetic sensors, in particular to a magnetoresistance thin film and a manufacturing method thereof. Background technique [0002] Magnetoresistive thin films are widely used in various random access memories, read heads, and magnetic sensors. In these devices, the information storage density depends largely on the properties of the magnetoresistive film. [0003] The magnetoresistance effect (Magneto Resistance, MR) refers to the phenomenon that the resistance of a substance changes with the change of the external magnetic field. Nowadays, the most common magnetoresistance films using the magnetoresistance effect are mainly giant magnetoresistance (Giant Magneto Resistance, GMR) and anisotropic magnetoresistance (Anisotropic MagnetoResistance, AMR). However, due to the problem of poor stability of the information storage device made of the giant magnetoresistance film, the information storage device made of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/08
Inventor 赵波刘玮荪
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap