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Semiconductor element structure

A semiconductor and component technology, applied in the field of semiconductor component structure, can solve the problems of increasing gate, increasing current density, bulky volume, etc., and achieve the effect of increasing current density, increasing output power, and reducing volume

Inactive Publication Date: 2013-12-18
泓广科技有限公司
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Problems solved by technology

However, in order to generate enough power, these power converters usually require multiple power transistors with strong current driving capability, that is, increasing the perimeter of the gate can only increase the current density, and increasing the perimeter area will relatively occupy a large amount of power. Therefore, in addition to the problem of bulky size, this power transistor also has multiple problems in circuit layout, such as current density, heat dissipation, on-resistance and current uniformity.

Method used

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  • Semiconductor element structure
  • Semiconductor element structure
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Embodiment Construction

[0024] Please also refer to figure 1 and figure 2 , figure 1 It is a structural diagram of the present invention, figure 2 for figure 1 Sectional view taken along section line A-A'. The semiconductor device structure includes a substrate 10 and at least one ring transistor unit 12 . The ring transistor unit 12 includes a solid gate layer 122, a ring gate layer 124 and a doped layer 126; the solid gate layer 122 is arranged in the substrate 10, and the ring gate layer 124 is arranged around the solid gate A layer 122 and a doped layer 126 are located between the solid gate layer 122 and the ring-shaped gate layer 124 to form a double-gate transistor cell.

[0025] Wherein, the ring transistor unit 12 is a power transistor, and the doped layer 126 is a drain or a source. Since the area of ​​the gate is proportional to the current, if the total circumference of the gate is long enough, the driving capability of the current can be effectively improved. In detail, in order...

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Abstract

The invention relates to a semiconductor element structure which comprises at least one annular transistor unit which is arranged in a substrate. The annular transistor unit comprises a solid grid layer, a doping layer and an annular grid layer, wherein the solid grid layer, the doping layer and the annular grid layer are sequentially arranged in the substrate from inside to outside. Due to design of the solid or annular shape, the perimeter of the edge in the same area can be increased, and therefore the effects of improving the current density, the voltage-resisting performance and power output are achieved.

Description

technical field [0001] The present invention relates to a semiconductor element structure, in particular to a semiconductor element structure using a ring-shaped transistor unit. Background technique [0002] With the advancement of technology and the increasing demand for multi-functionality of electronic products, it is necessary to integrate multiple circuits with different functions; relatively, the more multi-functional electronic products, the more power supply is required For the operation of electronic products, generally each function is provided with its own dedicated power supply system to provide the required power. However, due to cost and volume considerations, this method cannot be implemented. [0003] For the problem of power supply, many different types of power converters have been proposed in the industry to generate sufficient power, such as DC-to-DC power converters or AC-to-DC power converters, to solve the aforementioned problems. However, in order t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423
Inventor 杨信佳郭志盛
Owner 泓广科技有限公司
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