Unlock instant, AI-driven research and patent intelligence for your innovation.

low noise amplifier

A low-noise amplifier and transistor technology, applied in the direction of improving the amplifier to reduce the influence of noise, etc., can solve the problems of high cost and large metal thickness of the layout low-noise amplifier, and achieve the effect of low power consumption, low cost and small area

Active Publication Date: 2018-05-01
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Generally speaking, the low-noise amplifier inductor used for input matching is composed of passive components, which not only requires the support of the inductor process in the integrated circuit manufacturing process, that is, the thickness of the top layer and the sub-top layer metal is very large, but also because the inductor occupies a lot of layout resources make the cost of the entire LNA higher

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • low noise amplifier
  • low noise amplifier
  • low noise amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0020] In this specification and in the claims, it will be understood that when an element is referred to as being "connected to" or "connected to" another element, it can be directly connected or intervening elements may be present.

[0021] The low noise amplifier of the present invention comprises an input impedance matching circuit, an amplifying circuit and an output impedance matching circuit, the amplifying circuit constitutes the input stage of the low noise amplifier, the output impedance matching circuit constitutes the output stage of the low noise amplif...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low-noise amplifier, which includes an input impedance matching circuit, an amplifying circuit and an output impedance matching circuit, wherein the input impedance matching circuit includes an active inductance circuit for matching input impedances at different frequencies, It includes: a first NMOS transistor, the source of which is connected to the third current source, and the drain is connected to the voltage source; the second NMOS transistor, whose drain is connected to the second current source and the gate of the first NMOS transistor; the third NMOS transistor, Its drain is connected to the source of the second NMOS transistor, the gate is connected to the source of the first NMOS transistor, and the source is grounded; and the drain of the fourth NMOS transistor is connected to the gate of the second NMOS transistor and the first current The source is connected, the gate is connected with the source of the third NMOS tube, and the drain is grounded; the amplifier circuit is connected with the active inductance circuit and the output impedance matching circuit. The low noise amplifier of the invention can realize signal amplification under different frequencies.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a low noise amplifier. Background technique [0002] The low-noise amplifier is one of the important modules in the radio frequency transceiver. It is mainly used in the communication system to amplify the signal received from the antenna, so as to facilitate the processing of the receiver circuit in the subsequent stage. [0003] Since the signal from the antenna is generally very weak, the low noise amplifier is generally located very close to the antenna to reduce signal loss. It is precisely because the noise amplifier is located at the first stage of the entire receiver close to the antenna, its characteristics directly affect the quality of the signal received by the entire receiver. In order to ensure that the signal received by the antenna can be correctly recovered in the final stage of the receiver, a good LNA needs to amplify the signal while generating the lowest p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/26
Inventor 李琛蒋宇吕本强
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT