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Deep groove manufacturing method used in mems process

A manufacturing method and deep groove technology, which are applied in the process of producing decorative surface effects, manufacturing microstructure devices, metal material coating processes, etc., can solve problems such as inability to form U-shaped grooves, and achieve high aspect ratio, CMOS Process-compatible, low-cost effects

Active Publication Date: 2016-01-20
HANGZHOU SILAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] It can be seen that the etching direction of the wet etching process is related to the crystal orientation. There are various limitations in using the wet etching process to etch deep grooves. It can only be etched to form V-shaped grooves or similar V-shaped grooves, and cannot form U-shaped grooves; When the depth of the deep groove produced by the etching process is greater than 20 μm, it is necessary to purchase special deep groove etching equipment

Method used

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  • Deep groove manufacturing method used in mems process
  • Deep groove manufacturing method used in mems process
  • Deep groove manufacturing method used in mems process

Examples

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Embodiment 1

[0038] Below to figure 1 The production process shown as an example, combined with the attached Figures 2a to 2j , a detailed description of a deep trench manufacturing method used in MEMS technology.

[0039] In step S1, first, see Figure 2a A buffer layer 101 is respectively formed on the front and back sides of a silicon substrate 100 for MEMS capping. Wherein, the silicon substrate 100 is a p-type doped silicon wafer with a certain concentration. The material of the buffer layer 101 is silicon dioxide (SiO2), the buffer layer 101 is formed by thermal oxidation, and the thickness of the buffer layer is about

[0040] Second, see Figure 2b , on the surface of each buffer layer 101 that has been formed, a masking layer 102 with a certain thickness is deposited by using a low pressure chemical vapor deposition method (Low Pressure Chemical Vapor Deposition System, LPCVD), and the thickness of the masking layer 102 is about The material used for the masking layer 102...

Embodiment 2

[0054] The following takes the production process shown in Figure 2 as an example, combined with the attached Figures 2a to 2h and combine Figure 2k and 2l , another deep trench fabrication method used in MEMS technology is described in detail.

[0055] In this embodiment, for the specific content of step S1 to step S4, please refer to the content of step S1 to step S4 in the first embodiment, respectively, and details will not be repeated here.

[0056] In step S5, first, see Figure 2k , taking advantage of the feature that the porous silicon layer is easy to oxidize, adopting a thermal oxidation process to make the porous silicon layer D3 into a thermal silicon oxide layer 106'.

[0057] Wherein, when the contact layer 104 is formed by implanting B ions into the back side of the silicon substrate 100, a thermal silicon oxide layer 106' is also formed on the back side of the silicon substrate; when the contact layer 104 is In the case of an aluminum layer, there is no ...

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Abstract

The method for manufacturing deep grooves used in the MEMS process provided by the present invention is to form a buffer layer and a masking layer sequentially on the front side of a silicon substrate used for MEMS capping, and form a contact layer on the back side of the silicon substrate Etching the masking layer to form a corrosion window exposing the buffer layer; the first acidic solution removes the exposed buffer layer, and after using electrochemical corrosion to form a porous silicon layer at the silicon substrate position corresponding to the corrosion window, stop the electrolysis Chemical etching, using the characteristics of fast corrosion rate of porous silicon layer in alkaline solution to form deep grooves, or after porous silicon layer is easy to oxidize, use second acidic solution to remove thermal silicon oxide layer to form deep grooves. The corrosion direction of the invention has nothing to do with the crystal orientation, and similar U-shaped grooves can be formed, and the realized equipment is simple, the cost is low, and a higher aspect ratio can be achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing technology, and in particular relates to a deep groove manufacturing method used in MEMS technology. Background technique [0002] Micro-Electro-Mechanical-Systems (MEMS) has a variety of raw materials and manufacturing technologies, and the selection criteria are system applications, markets, and so on. The basic manufacturing technology of MEMS mainly includes body micromachining technology, surface micromachining technology, bonding in special MEMS processing technology, LIGA (that is, the abbreviation of Lithographie (lithography), Galvanoformung (electroforming) and Abformung (plastic casting)) Technology, electrodeposition technology, etc., have become the essential core technology for the development and production of MEMS. Among them, the bulk micromachining technology is similar to deep etching, which is another method of removing silicon, that is, etching the silicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 季锋范伟宏闻永祥刘琛饶晓俊
Owner HANGZHOU SILAN INTEGRATED CIRCUIT
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