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Silicon material melting process monitoring method based on high-order singular value decomposition

A high-order singular value, melting process technology, applied in image analysis, image data processing, instruments, etc., can solve problems such as inability to accurately and effectively monitor the melting of silicon materials, and achieve the effect of easy implementation and simple monitoring methods

Active Publication Date: 2014-01-01
XIAN UNIV OF TECH
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for monitoring the melting process of silicon material based on high-order singular value decomposition, so as to solve the problem that the process of melting silicon material cannot be accurately and effectively monitored in the prior art

Method used

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  • Silicon material melting process monitoring method based on high-order singular value decomposition
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  • Silicon material melting process monitoring method based on high-order singular value decomposition

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Embodiment

[0047] Step 1: If figure 1 As shown, a CCD camera is used to collect and store several images of the melting state of the silicon material at the current time t and the previous time, and the images are preprocessed by corresponding cropping and brightness transformation to obtain image data for detecting the melting state of the silicon material.

[0048] Step 2: The image P at the current moment t t and the image at the previous moment {P t-1 ,P t-2 ,...,P t-k} Calculate the dissimilarity d(P t ,P j ), and then passed with the set threshold {δ 1 ,…,δ k} to determine the image sequence at the previous moment for the detection of the melting state change of the silicon material, that is, when d(P t ,P j )≥δ j , the tensor A t Add one to the modulo-3 dimension of the image P j Put it in the corresponding position. Assuming that the size of the image is M×N, and the number of selected images is k, the third-order tensor A t The size of is M×N×k.

[0049] in, ...

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Abstract

The invention provides a silicon material melting process monitoring method based on high-order singular value decomposition. A CCD camera is used for real-time image sequence collection in a silicon material melting process first; a plurality of two-dimensional image sequences previous to the current moment are used for forming a three-dimensional tensor, and the tensor is subjected to high-order singular value decomposition (HOSVD) to obtain base images used for representing a previous melting state; then, a correlation between images collected in the current silicon material melting process and the base images containing main formation is calculated, and whether the silicon material melting state changes is judged according to the correlation. By means of the silicon material melting process monitoring method based on high-order singular value decomposition, the change of state of silicon materials can be detected under the condition that the background of the silicon material melting state is relatively complicated in an initial stage and an intermediate stage, the change in the silicon material melting state and noise of molten liquid movement can be distinguished easily in a later stage of melting, and therefore the silicon material melting process is monitored accurately and effectively.

Description

technical field [0001] The invention belongs to the technical field of monitoring methods for the melting process of crystal growth silicon materials, and in particular relates to a monitoring method for the melting process of crystal growth silicon materials based on high-order singular value decomposition. Background technique [0002] Silicon material melting control is an important part of crystal growth. When the silicon material is completely melted and the temperature of the melt is stable, the crystal growth process can start. In this process, the silicon material is placed in a quartz crucible, and the crucible is heated with a high-purity graphite heater on the periphery of the crucible. In the actual operation process, the heating power should be increased or decreased according to the melting state of the silicon material, and the crucible should be rotated and raised to ensure the safety and efficiency of the whole process. The silicon material absorbs latent ...

Claims

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Application Information

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IPC IPC(8): G06T7/00
Inventor 梁军利范自强刘丁张妙花柯婷于国阳
Owner XIAN UNIV OF TECH
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