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Flexible resistive random access memory based on oxidized graphene and preparation method thereof

A technology of resistive memory and graphene, which is applied in the direction of electrical components, etc., to achieve the effect of reducing thermal budget, enhancing success rate, and ensuring erasing window

Inactive Publication Date: 2014-01-01
FUDAN UNIV
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  • Abstract
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This feature makes it possible for applications in complex environments

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  • Flexible resistive random access memory based on oxidized graphene and preparation method thereof
  • Flexible resistive random access memory based on oxidized graphene and preparation method thereof
  • Flexible resistive random access memory based on oxidized graphene and preparation method thereof

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preparation example Construction

[0033] Preparation of graphene oxide flexible memory and detection of resistive properties

[0034] figure 2 The I-V characteristic curve of the device is based on graphene oxide as the resistive switching functional layer, the substrate is PET, the lower electrode is ITO, and the upper electrode is Al. The initial state of the device is a high-resistance state, and the mark 1 in the figure is the transition process of the device from a high-resistance state to a low-resistance state under the excitation of a forward voltage; 2 is a voltage retrace process and a low-resistance state maintenance process; The process of transitioning from a low-resistance state to a high-resistance state under the excitation of a negative voltage. 4 is the process of maintaining the high-impedance state after the device returns to the high-impedance state. The resistance of the device can be obtained at a small read voltage (such as 0.3 V), the high-to-low resistance ratio is >100, it has a g...

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Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a flexible resistive random access memory based on oxidized graphene and a preparation method thereof. The flexible resistive random access memory comprises a transparent flexible substrate and a three-layer structure device unit on the substrate, the bottom layer of the device unit is a flexible transparent electrode, the top layer electrode can be metal or other electrodes, and the middle functional layer is an oxidized graphene thin film. As the experiment proves, the oxidized graphene has the good resistance change characteristics, rotating coating can be carried out at the indoor temperature to form the functional layer of the resistive random access memory, the high-temperature process required for growing other materials of the functional layer is avoided, and the obtained flexible resistive random access memory can be applied to flexible electronic devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a flexible resistive memory based on graphene oxide and a preparation method thereof. Background technique [0002] With the development of integrated circuits, people's demand for semiconductor devices is not limited to the increase in performance, but extends to more aspects. For example, flexible devices can be folded and curled. This feature makes it possible for applications in complex environments. [0003] One of the difficulties encountered in the development of flexible electronic devices is that flexible organic substrates cannot withstand high temperatures, so the necessary thermal budget in the device manufacturing process must be reduced. In order to obtain traditional resistive switching materials with good performance, such as Al 2 O3, HfO 2 ,TiO 2 , Cu x O, etc., the growth temperature must be controlled within the reaction temperat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 孙清清王鲁浩王鹏飞张卫周鹏
Owner FUDAN UNIV
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