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Wiring defect inspecting method, wiring defect inspecting apparatus, and method for manufacturing semiconductor substrate

A defect inspection, semiconductor technology

Inactive Publication Date: 2014-01-01
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in array inspection, even if it is possible to detect whether there is a defect in the wiring portion, it is difficult to identify the position of the defect

Method used

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  • Wiring defect inspecting method, wiring defect inspecting apparatus, and method for manufacturing semiconductor substrate
  • Wiring defect inspecting method, wiring defect inspecting apparatus, and method for manufacturing semiconductor substrate
  • Wiring defect inspecting method, wiring defect inspecting apparatus, and method for manufacturing semiconductor substrate

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Embodiment approach 1

[0050] refer to Figure 1 to Figure 5 , an embodiment of the wiring defect inspection method according to the present invention will be described.

[0051] figure 1 (a) is a block diagram showing the configuration of the wiring defect inspection device 100 for performing the wiring defect inspection method in this embodiment, figure 1 (b) is a perspective view of the mother substrate 1 (semiconductor substrate) to be inspected for wiring defects using the wiring defect inspection device 100 .

[0052] The wiring defect inspection device 100 can figure 1 Defects such as wiring in a plurality of liquid crystal panels 2 (semiconductor substrates) formed on the mother substrate 1 shown in (b) are inspected. Therefore, wiring defect inspection apparatus 100 includes probe 3 for conducting conduction with liquid crystal panel 2 , and probe moving unit 4 for moving probe 3 on each liquid crystal panel 2 . Moreover, the wiring defect inspection apparatus 100 includes the infrared ...

Embodiment approach 2

[0127] Other embodiments related to the present invention will be described.

[0128] In this embodiment, the same device as that in Embodiment 1 is used, and the following settings are made such that the applied voltage V (volt) is different from that in Embodiment 1.

[0129] In the first embodiment described above, in step S6 , the applied voltage V (volts) proportional to the square root of the resistance value acquired in step S4 is applied to the liquid crystal panel 2 . In contrast, in this embodiment, the applied voltage V (volts) proportional to the resistance value obtained in step S4 is applied to the liquid crystal panel 2 ( figure 1 (b) and figure 2 ).

[0130] Specifically, in step S6 of the present embodiment, the applied voltage V (volt) is set to the following formula (4).

[0131] 【Mathematical formula 4】

[0132] V=m×R···(4)

[0133] Among them, m: constant, R: resistance value (ohm)

[0134] Here, the current I (ampere) is the following formula (5); ...

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Abstract

In this wiring defect inspecting method, a resistance value of a short-circuited path of a semiconductor substrate is obtained, a voltage specified on the basis of the obtained resistance value is applied to the semiconductor substrate having the defect portion so as to have the defect portion generate heat and increase temperature, and the semiconductor substrate, in which the defect portion has an increased temperature by generating heat, is photographed using an infrared camera.

Description

technical field [0001] The present invention relates to a wiring defect inspection method, a defect inspection device, and a semiconductor substrate manufacturing method suitable for defect detection of wiring formed on semiconductor substrates such as liquid crystal panels and solar cell panels. Background technique [0002] As an example of a semiconductor substrate, for example, the manufacturing process of a liquid crystal panel is roughly divided into an array (TFT) process, a cell (liquid crystal) process, and a module process. Among them, in the array process, after the gate electrode, semiconductor film, source-drain electrode, protective film, and transparent electrode are formed on the transparent substrate, the array inspection is performed to check whether there is a short circuit in the electrode or wiring. [0003] Usually, in an array inspection, the above-mentioned defects are identified by touching a probe to an end of a wiring to measure resistance at both ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/72G01B11/00G01R31/02
CPCG01R31/26G01R31/046G01R31/2812G01R31/2806G01N25/72G01R31/405G01R31/025G09G3/006G01R31/70H02S50/10Y02E10/50
Inventor 山田荣二
Owner SHARP KK