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Method for polishing side wall of microstructure through ion beam etching technique

A technology of ion beam etching and microstructure, which is applied in the field of ultra-precision machining, and can solve problems such as the difficulty of polishing side walls with large aspect ratios

Active Publication Date: 2014-01-08
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The techniques currently used to polish the microstructure sidewall include chemical polishing, electrochemical polishing, magnetic fluid polishing, etc., but as mentioned above, these techniques have technical difficulties in polishing the sidewall with a large aspect ratio

Method used

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  • Method for polishing side wall of microstructure through ion beam etching technique
  • Method for polishing side wall of microstructure through ion beam etching technique
  • Method for polishing side wall of microstructure through ion beam etching technique

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Embodiment 1

[0035] based on figure 1 Shown utilizes the method flowchart of ion beam etching technology to polish the microstructure sidewall, provides embodiment 1 below, and embodiment 1 is specifically as follows:

[0036] Step 1: the sample to be polished is placed on the sample holder, and the sample holder is fixed on the sample stage in the vacuum chamber of the ion beam etching system, such as figure 2 shown. The sample is 240μm in thickness and slightly larger than 1cm in area 2 In the center of the sample, there is an array of square through holes. The repeating unit is a square through hole with a side length of 40 μm, a pitch of 10 μm, and a period of 200×200. The distance between the bottom surface of the sample and the sample stage is 5mm.

[0037] In order to show the state of the sample placed in the etching chamber more clearly and intuitively, figure 2 A schematic diagram of a sample placed in an etching chamber is shown. The included angle between the axial direc...

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Abstract

The invention discloses a method for polishing the side wall of a microstructure through the ion beam etching technique, and belongs to the technical field of ultra-precision machining. The method includes the steps that a sample, with the microstructure, to be polished is placed on a sample table in a cavity of an ion beam etching device, a certain distance is kept between the bottom face of the sample and the sample table through a sample holder, and the side wall to be polished of the sample is made perpendicular to the plane of the sample table; an inclination angle needed by the sample table is calculated according to the depth-to-width ratio of the sample, with the microstructure, to be polished, and the sample table is adjusted to be at the inclination angle; the sample is etched through ion beams, wherein the sample table rotates automatically all the time in the etching process. According to the method for polishing the side wall of the microstructure through the ion beam etching technique, high-precision polishing of the side wall of the microstructure can be realized.

Description

technical field [0001] The invention relates to a method for polishing the side wall of a microstructure by using ion beam etching technology, and belongs to the technical field of ultra-precision processing. Background technique [0002] Polishing technology is a processing method that uses physical, mechanical, chemical, electrochemical and other effects to reduce the surface roughness of objects. The polishing technology has a wide range of applications, such as the polishing of the surface of the car body, the polishing of the floor, the polishing of the surface of the decoration and so on. When a surface can clearly reflect the image of an object, it is called a mirror. If Root Mean Square (RMS) roughness is used to characterize the smoothness of the surface of an object, the roughness of the mirror surface is on the order of microns. Mirror polishing is a more precise polishing technology, which is mainly used in precision machinery and optical industries, so that th...

Claims

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Application Information

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IPC IPC(8): B24B1/00
CPCB24B1/00
Inventor 张天冲伊福廷王波刘静张新帅
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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