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Plasma enhanced chemical vapor deposition (PECVD) equipment with automatic control system of hot exhaust fan

A technology of automatic control system and exhaust fan, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of high power consumption and uncontrolled exhaust air.

Inactive Publication Date: 2014-01-22
YANGZHOU XINJING PHOTOVOLTAIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this structure is: when the graphite boat is out of the boat, the heat exhaust device works, and when the graphite boat enters the furnace tube, the heat exhaust device is always working, the exhaust air is not controlled, it is in the normal open state, and the power consumption is large

Method used

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  • Plasma enhanced chemical vapor deposition (PECVD) equipment with automatic control system of hot exhaust fan

Examples

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Effect test

Embodiment Construction

[0008] Such as figure 1 As shown, it is a PECVD equipment with an automatic control system for a thermal exhaust fan, including a furnace tube 1, a boat supporting device 3 is arranged on one side of the furnace tube 1, a graphite boat 4 and a push-pull device 5 are arranged on the boat supporting device 3, and the graphite boat 4 and The push-pull device 5 is connected, and the top of the boat support device 3 is provided with a heat discharge device 8 at intervals. The heat discharge device 8 includes a fan electric control cabinet 6, and a relay 7 is arranged in the fan electric control cabinet 6. The boat support device 3 is connected to the sensor 2 to sense The signal output terminal of device 2 is connected with relay 7.

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Abstract

The invention discloses plasma enhanced chemical vapor deposition (PECVD) equipment with an automatic control system of a hot exhaust fan, relates to the field of production equipment of a silicon solar cell, and particularly relates to equipment for fabricating a SiN film of reducing surface reflection of a silicon wafer. The equipment comprises a furnace tube, wherein a boat support device is arranged at one side of the furnace tube; a graphite boat and a push-pull device are arranged on the boat support device; the graphite boat is connected with the push-pull device; heat exhaust devices are arranged above the boat support device at intervals; each heat exhaust device comprises an electric control cabinet of a fan; a relay is arranged inside each electric control cabinet of the fan; the boat support device is connected to a sensor; the signal output end of the sensor is connected with each relay. By adopting the equipment, the signal is collected by using the sensor; the fan is controlled to turn on so as to exhaust heat in a boat discharge process; the heat does not need to be exhausted when a boat arm is arranged at the inner side of a PECVD furnace tube, and the fan is automatically shut down. Thus, an energy source is saved.

Description

technical field [0001] The invention relates to the field of solar silicon cell production equipment, in particular to SiN thin film equipment for reducing the surface reflection of silicon wafers. Background technique [0002] PECVD is plasma-enhanced chemical vapor deposition equipment, which is used to produce SiN thin films that reduce the reflection on the surface of silicon wafers. Existing PECVD equipment includes a furnace tube. A boat support device is arranged on one side of the furnace tube. A graphite boat and a push-pull device are arranged on the boat support device. The defect of this structure is: when the graphite boat is out of the boat, the heat discharge device works, and when the graphite boat enters the furnace tube, the heat discharge device is always working, the exhaust air is not controlled, it is in the normal open state, and the power consumption is large. Contents of the invention [0003] The purpose of the present invention is to overcome th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/34C23C16/44C23C16/50
Inventor 朱守权
Owner YANGZHOU XINJING PHOTOVOLTAIC TECH