Unlock instant, AI-driven research and patent intelligence for your innovation.

Boost Charge Pump

A charge pump, boost technology, applied in electrical components, conversion equipment without intermediate conversion to AC, output power conversion devices, etc., can solve the problem of increasing design cost and power consumption, large ripple, and increasing design difficulty, etc. problems, to meet the design requirements, small ripple, and reduce the design complexity.

Active Publication Date: 2015-09-30
南京芯耐特半导体有限公司
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to provide a step-up charge pump to solve the problem that the design of the charge pump in the prior art needs a

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Boost Charge Pump
  • Boost Charge Pump
  • Boost Charge Pump

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The specific implementation of the step-up charge pump provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0016] Reference attached image 3 , a circuit diagram of an embodiment of the step-up charge pump of the present invention, the step-up charge pump includes at least a first charge pumping unit 1, a second charge pumping unit 2, an output storage capacitor C4 and a voltage selection circuit 3. Among them, the cross points connected by wires in the figure are indicated by solid circles.

[0017] The first charge pumping unit 1 includes a first charge pump capacitor c1, a first output PMOS transistor pm3, and at least one charging clock signal terminal 11, and the second charge pumping unit 2 includes a second charge pump capacitor c2, a second output The PMOS transistor pm4 and at least one charging clock signal terminal 21 .

[0018] The source of the first output PMOS transistor pm3 is connected ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a boosting charge pump. The boosting charge pump comprises at least one first charge drawing unit, a second charge drawing unit and an output storage capacitor, wherein the first charge drawing unit comprises a first charge pump capacitor, a first output P-channel metal oxide semiconductor (PMOS) transistor and at least one charging clock signal end; the second charge drawing unit comprises a second charge pump capacitor, a second output PMOS transistor and at least one charging clock signal end; the first output PMOS transistor and the second output PMOS transistor interact with each other and are respectively turned on or off according to a charging clock signal, so that the first charge pump capacitor and the second charge pump capacitor periodically charge the output storage capacitor. By ingenious connection between the output PMOS transistors in each charge drawing unit, the design complexity is effectively reduced, the same output voltage performance is obtained, and requirements of design key points are effectively met; the output storage capacitor is charged in a period for at least two times. Compared with a conventional structure, the structure of the boosting charge pump has the advantages that the ripple is much smaller; better output characteristics are obtained.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a boost type charge pump with simple structure and excellent performance. Background technique [0002] Charge pump circuits are widely used in analog circuits, which are mainly composed of capacitors, switches, non-overlapping clocks and level conversion circuits, the most important of which are the realization of capacitors and switches. Existing simple charge pumps such as figure 1 As shown, it is implemented by using capacitors and diodes, and ck1 and ck2 are a pair of non-overlapping clocks. The working principle of the charge pump is as follows: Assuming that the conduction voltage of the diode is vt, when ck1=0, D1 conducts, and in steady state, va=vin-vt; when ck1=vin, ck2=0, va=2vin-vt , At the same time, D2 is turned on, and vb=2vin-2vt in steady state. In this way, the voltages of va, vb, and vcp are gradually raised, and the number of capacitors and diodes ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M3/07H02M1/14
Inventor 刘楠庄在龙
Owner 南京芯耐特半导体有限公司