Wafer laser cutting method and wafer processing method

Abstract

The invention provides a wafer laser cutting method. The wafer laser cutting method comprises the following steps that a wafer is provided, wherein the wafer is provided with a front face and a back face which is provided with an electrode, and the back face of the wafer is provided with a cutting track; the back face of the wafer is pasted with a film; the wafer pasted with the film is positioned in a laser cutting device, and a laser sent by the laser cutting device cuts at least two times with different cutting depths along the same cutting track of the wafer from the front face of the wafer. Two times of laser processing with different cutting depths are carried out inside the same cutting track of the wafer, the problem of poor oblique segmentation caused when the laser cuts the thick wafer is greatly improved, and the electrode damage caused by the too large oblique segmentation of laser cutting is effectively avoided. The wafer laser cutting method has very large advantages and the yield compared with a traditional one-time laser cutting method. The invention further provides a wafer processing method.

Description

Technical field [0001] The invention relates to a wafer laser cutting method and a wafer processing method. Background technique [0002] With the continuous increase in market demand, the LED manufacturing industry has higher and higher requirements for production capacity, yield and brightness. Laser processing technology has become the primary tool of the LED manufacturing industry and the industry standard for high-brightness LED wafer processing. [0003] Laser scribing greatly reduces wafer microcracks and microcrack expansion, and the distance between LED monomers is greatly reduced, which not only improves productivity, but also increases production efficiency. The laser scribing mentioned here means laser cutting of the wafer 20. [0004] See figure 1 After the wafer 20 is diced in a single time, it needs to be put into an automatic splitter or a semi-automatic splitter for splitting. Due to the influence of the crystal lattice structure of the wafer 20 itself, the crack 2...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the embodiments of the present invention is to provide a laser cutting method for wafers, which aims to solve the problem in the prior art that the cracks are skewed to the electrodes and lead to the low pass rate of LED monomers

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