Nonvolatle memory device and memory system, and related memory management, erase and programming method

Abstract

An erase method of a nonvolatile memory device includes setting an erase mode, and performing one of a normal erase operation and a quick erase operation according to the set erase mode. The normal erase operation is performed to set a threshold voltage of a memory cell to an erase state which is lower than a first erase verification level. The quick erase operation is performed to set a threshold voltage of a memory cell to a pseudo erase state which is lower than a second erase verification level. The second erase verification level is higher than the first erase verification level.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0075596 filed with the Korean Intellectual Property Office on Jul. 11, 2012, the entire contents of which are incorporated herein by reference. technical field [0003] The inventive concepts described herein relate to non-volatile memory devices, memory systems including the same, and related block management, erasing and programming methods. Background technique [0004] Semiconductor memory devices are generally classified as either volatile or nonvolatile. A nonvolatile semiconductor memory device may retain data stored therein even in a power-off state, whereas a volatile memory device may lose stored data when power is interrupted. [0005] Depending on the fabrication technique used, non-volatile memory devices can be permanent or reprogrammable. Non-volatile memory devices can be used to store user data, program data, and microcode da...

AI Technical Summary

Problems solved by technology

Non-volatile semiconductor memory devices can retain data stored in them even in a power-off state, while volatile memory devices can lose stored data when power is interrupted

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