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semiconductor structure

A technology of semiconductor and film layer, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as capacitance mismatch, affecting the accuracy of digital signals, etc., and achieve the effect of improving reliability

Active Publication Date: 2017-06-06
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The capacitance value of the capacitor is quite sensitive to the manufacturing process and structural design, so the capacitance of each capacitor often affects the accuracy of the subsequent digital signal due to the problem of capacitance mismatch.

Method used

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  • semiconductor structure
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Embodiment Construction

[0040] see Figure 1 to Figure 3 , Figure 1 to Figure 3 It is a schematic diagram of the first preferred embodiment of the semiconductor structure provided by the present invention. Such as figure 1 As shown, the first preferred embodiment provides a first capacitor C 1 with a second capacitor C 2 , the first capacitance C 1 Contains a plurality of first units (unit) 100, and the second capacitor C 2 A plurality of second units 200 are included. In this preferred embodiment, the number of the first unit 100 and the second unit 200 are the same, that is to say, the ratio of the number of the first unit 100 to the second unit 200 is 1. Such as figure 1 As shown, each first unit 100 includes a plurality of first finger electrodes 110 and a plurality of third finger electrodes 120, and the first finger electrodes 110 and the third finger electrodes 120 are alternately arranged to form the first finger electrode 110. 100 for one unit. Similarly, each second unit 200 inclu...

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Abstract

The invention discloses a semiconductor structure, which includes a first capacitor and a second capacitor. The first capacitor includes a plurality of first units, and each first unit includes a plurality of first finger electrodes. The second capacitor includes a plurality of second units, and each second unit includes a plurality of second finger electrodes. The first units and the second units are staggered to form an array. The semiconductor structure also includes a plurality of first connection lines and second connection lines parallel to each other. The first connection lines are electrically connected to the first finger electrodes, and the first finger electrodes and their adjacent The first connection lines form a straight line; the second connection lines are electrically connected to the second finger electrodes, and the second finger electrodes and the adjacent second connection lines form a straight line.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to a semiconductor capacitor structure capable of improving capacitance mismatch. Background technique [0002] In modern integrated circuits, capacitors are one of the main circuit elements. For example, capacitors used in logic analog components in the industry include metal-oxide-metal (MOM) capacitors and metal-insulator-metal (MIM) capacitors. The capacitance value of the capacitor is very sensitive to the manufacturing process and structural design, so the capacitance of each capacitor often affects the accuracy of the subsequent digital signal due to the problem of capacitance mismatch. [0003] Therefore, the industry still needs a capacitor structure that can effectively improve problems such as capacitance mismatch. Contents of the invention [0004] In order to solve the above problems, the present invention provides a semiconductor structure, the semiconductor structure i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522
Inventor 郑兆升邱凯翎曾志裕
Owner UNITED MICROELECTRONICS CORP
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