Vertical structure light emitting diode chip with low cost and preparation method thereof

Abstract

The invention discloses a vertical structure light emitting diode chip with low cost and a preparation method thereof. The structure of the chip comprises a base plate layer. An epitaxial layer growing on a substrate is transferred to the base plate layer. A barrier protection layer, a dilution protection layer and an adhesive layer are orderly arranged from top to bottom between the base plate layer and the epitaxial layer. An N electrode is on the epitaxial layer. By using the dilution protection layer and the barrier protection layer which are formed by the overlapping of many kinds of metal or alloy, a problem that low cost and low melting point metal which is taken as a bonding layer material has the problems of poor corrosion resistance ability, strong diffusion ability, easy destroying of the structure and photoelectric performance of the light emitting diode and the like is overcome, thus the dilution protection layer and the barrier protection layer can replace noble metal to be a hot pressing adhesive material, on one hand, the preparation cost of the vertical structure light emitting diode chip is greatly reduced, one the other hand, the hot pressing temperature and pressure are low, the residual stress of hot pressing is reduced, and the photoelectric performance and reliability of a device are raised. The vertical structure light emitting diode chip is mainly used in a semiconductor light emitting device.

Description

technical field [0001] The invention relates to a semiconductor light-emitting device and a preparation method thereof, in particular to a low-cost vertical structure light-emitting diode chip and a preparation method thereof. Background technique: [0002] In terms of the structure of light-emitting diodes, GaN-based light-emitting diode chips can be divided into front-mounted structures, flip-chip structures, and vertical structures. The structure of the traditional front-mounted light-emitting diode chip is simple and the process is relatively mature. However, it has two disadvantages: current congestion and heat dissipation difficulties; the flip-chip light-emitting diode chip effectively improves the heat dissipation problem of the traditional front-mounted light-emitting diode chip. The diode chip is welded together with the base plate with good thermal conductivity, so that the light-emitting diode chip is placed on the base plate upside down, so that heat can be dis...

AI Technical Summary

Problems solved by technology

At present, the industrial production of vertical structure LEDs is carried out by the method of wafer thermocompression bonding for film transfer, but the current film transfer technology, especially the wafer thermocompression bonding stage, requires the use of a large amount of precious metal materials such as gold, platinum, gold tin, and precious metals. The manufacturing cost of the entire vertical structure light-emitting diode chip accounts for a large proportion, which limits the further reduction of the cost of vertical structure LEDs, and the cost is still one of the bottlenecks for the large-scale entry of LED light sources into the field of general lighting.

Images