Image sensor, imaging device, and device and method for manufacturing image sensor
An image sensor and silicon oxide film technology, which is applied in semiconductor/solid-state device manufacturing, image communication, radiation control devices, etc., can solve problems such as interface state deterioration and anti-reflection effect reduction, and achieve the effect of suppressing deterioration.
Active Publication Date: 2017-08-11
SONY CORP
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[0004] However, in the case where a silicon oxide film on an antireflection film is used as a moisture-proof film or in the case where a silicon oxide film and a silicon nitride film are laminated on an antireflection film, there is a decrease in the antireflection effect and the interface state Disadvantages of deterioration due to nitrogen
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no. 1 example
[0059] 1. First embodiment (CMOS image sensor)
[0060] 2. Second embodiment (manufacturing device and method)
no. 3 example
[0061] 3. Third Embodiment (CMOS Image Sensor)
no. 4 example （
[0062] 4. Fourth embodiment (manufacturing device and method)
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The present invention relates to a back-illuminated image sensor using a complementary metal oxide semiconductor (CMOS) capable of suppressing deterioration of an interface state of an interface in a silicon substrate, an imaging device including the image sensor, and an apparatus and method for manufacturing the image sensor , the back-illuminated image sensor includes: a light receiving unit formed in a semiconductor substrate for receiving incident light; an antireflection film formed on the back surface of the semiconductor substrate in which the light receiving unit is formed side; and a silicon oxide film formed on the back side of the antireflection film, the silicon oxide film having a lower refractive index than the silicon nitride film and having a higher density in its back side than in its front side density.
Description
technical field [0001] The present invention generally relates to image sensors, imaging devices, and devices and methods for fabricating the image sensors. More particularly, the present invention relates to an image sensor capable of suppressing deterioration of an interface state of an interface in a silicon substrate, an imaging device, and a device and method for manufacturing the image sensor. Background technique [0002] Recently, in back-illuminated complementary metal-oxide-semiconductor (CMOS) image sensors, a silicon oxide (Si) film is used to cover a silicon (Si) substrate with a good interface state. However, as pixels are made finer, it has become difficult to ignore the deterioration of the interface state caused by moisture (see, for example, "Hot-Carrier Aging of the MOS Transistor in the Presence of Spin-onGlass as the Interlevel Dielectric"). [0003] Therefore, a technique of forming a silicon nitride (Si) film as a film for preventing moisture penetra...
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IPC IPC(8): H01L27/146H01L21/8238H04N5/335H04N25/00
CPCH01L27/1462H01L27/14627H01L27/1464H01L27/14685H01L27/146
Inventor 谷国敬理山口晋平万田周治
Owner SONY CORP