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Ingot furnace and method for controlling retaining height of seed crystals during casting of quasi-single crystal

An ingot furnace and heat insulation layer technology are applied in the field of high seed crystal retention in the ingot furnace and control-type single crystal casting process, which can solve the problems of large and difficult remaining seed crystals, and improve the casting success rate. The effect of ensuring the remaining amount of seed crystals

Active Publication Date: 2014-02-19
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The present invention aims to provide an ingot furnace and a method for controlling the height of seed crystal retention in the process of quasi-single crystal casting, so as to solve the technical problem in the prior art that it is very difficult to ensure the remaining seed crystal in the process of controlling the melting process of silicon ingots

Method used

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  • Ingot furnace and method for controlling retaining height of seed crystals during casting of quasi-single crystal
  • Ingot furnace and method for controlling retaining height of seed crystals during casting of quasi-single crystal
  • Ingot furnace and method for controlling retaining height of seed crystals during casting of quasi-single crystal

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Embodiment approach

[0036] According to a typical implementation of the present invention, the method includes the following steps: Step 1: maintain the temperature at the top temperature measuring point 51 at 1135°C to 1175°C, the shutters 40 are closed, and the position of the heat insulation baffle 70 is the original position. position, the time is 60 to 120 minutes; in the second step, the temperature at the top temperature measuring point 51 rises to 1480°C to 1510°C, the shutter 40 is closed, and the position of the heat insulation baffle 70 is the original position, and the time is 180 to 300 minutes; In the third step, within 30 to 60 minutes, the temperature of the top temperature measuring point 51 rises to 1520°C to 1550°C, and the position of the heat insulation baffle 70 rises by 3 to 7 cm; the fourth step: maintain the final state of the third step unchanged 270 ~330 minutes; the fifth step: within 30~60 minutes, the temperature of the top temperature measuring point 51 drops to 1495...

Embodiment 1

[0042] The first step: maintain the temperature at the top temperature measuring point 51 at 1175°C, the louvers 40 are closed, and the position of the heat insulation baffle 70 is the original position, and the time is 60 minutes;

[0043] In the second step, the temperature at the top temperature measuring point 51 rises rapidly to 1480°C, the shutters 40 are closed, and the position of the heat insulation baffle 70 remains unchanged from the original position, and the time is 180 minutes;

[0044] In the third step, within 30 minutes, the temperature at the top temperature measurement point 51 rises from the final temperature of the second step temperature measurement point to 1520°C, and the position of the heat insulation baffle 70 rises by 3 cm;

[0045] Step 4: Keep the final state of the third step unchanged for 270 minutes;

[0046] Step 5: The temperature at the top temperature measuring point 51 is lowered from the final temperature of the third step to 1500°C, and ...

Embodiment 2

[0050] Step 1: Maintain the temperature at the top temperature measuring point 51 at 1135°C, the position of the louvers is closed, and the position of the heat insulation baffle 70 is the original position, and the time is 120 minutes;

[0051] In the second step, the temperature at the top temperature measurement point 51 rises rapidly to 1510°C, the position of the louvers is closed, and the position of the heat insulation baffle 70 remains unchanged from the original position, and the time is 300 minutes;

[0052] In the third step, within 60 minutes, the temperature at the top temperature measurement point 51 rises from the final temperature of the second step temperature measurement point to 1550°C, and the position of the heat insulation baffle 70 rises by 7 cm;

[0053] Step 4: Keep the final state of the third step unchanged for 330 minutes;

[0054] Step 5: The temperature at the top temperature measuring point 51 is lowered from the final temperature of the third pa...

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Abstract

The invention discloses an ingot furnace and a method for controlling the retaining height of seed crystals during casting of a quasi-single crystal. The ingot furnace comprises a lateral part heat insulation layer, a bottom heat insulation layer in an annular shape, a crucible arranged in a cavity formed by the bottom heat insulation layer and the lateral part heat insulation layer together in a surrounding manner, a heat insulation baffle arranged at the joint of the bottom heat insulation layer and the lateral part heat insulation layer and extending towards the center of the cavity, a top temperature measurement point arranged between the lateral part heat insulation layer and the crucible and located at the top of the cavity, wherein a shutter is arranged at the position of the inner ring of the bottom heat insulation layer, and the position of the heat insulation baffle is adjustable to regulate the space distribution of a high temperature area and a low temperature area in a thermal field in the ingot furnace. Through the regulation of the position of the heat insulation baffle in the thermal field in the ingot furnace, the space distribution of the high temperature area and the low temperature area is regulated, the smelting speed and the remaining height of the seed crystals at the bottom of the crucible are effectively controlled in the process of casting the quasi-single crystal, so that the surplus of the seed crystals in the process of casting the quasi-single crystal is guaranteed, and the casting yield rate of the quasi-single crystal is increased.

Description

technical field [0001] The invention relates to the field of quasi-single crystal silicon manufacturing, in particular to an ingot furnace and a method for controlling the height of seed crystal retention in the quasi-single crystal casting process. Background technique [0002] At present, the photovoltaic industry is developing rapidly. As a substitute for polycrystalline ingots, quasi-single crystal has great advantages in the photoelectric conversion efficiency of photovoltaic cells, and has become a popular product in the photovoltaic industry. [0003] Among them, the grain refers to the growth process of the crystalline substance, due to the limitation of the external space, it fails to develop into a crystal with a regular shape, but only crystallizes into a granular shape, that is, a monomer with the same crystal direction, called a grain. Quasi-single crystal, also known as quasi-single crystal, forms crystalline silicon material by ingot casting. On a silicon wafe...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/06
Inventor 潘家明魏景拓
Owner YINGLI GRP