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Ingot casting furnace and method for controlling seed crystal retention height during quasi-single crystal casting

An ingot furnace and control technology, which is applied in the field of monocrystalline silicon-like manufacturing, can solve problems such as difficulties and the large surplus of seed crystals, and achieve the effect of improving the success rate of casting and ensuring the remaining amount of seed crystals.

Active Publication Date: 2016-06-08
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The present invention aims to provide an ingot furnace and a method for controlling the height of seed crystal retention in the process of quasi-single crystal casting, so as to solve the technical problem in the prior art that it is very difficult to ensure the remaining seed crystal in the process of controlling the melting process of silicon ingots

Method used

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  • Ingot casting furnace and method for controlling seed crystal retention height during quasi-single crystal casting
  • Ingot casting furnace and method for controlling seed crystal retention height during quasi-single crystal casting
  • Ingot casting furnace and method for controlling seed crystal retention height during quasi-single crystal casting

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Effect test

Embodiment approach

[0036] According to a typical implementation of the present invention, the method includes the following steps: Step 1: maintain the temperature at the top temperature measuring point 51 at 1135°C to 1175°C, the shutters 40 are closed, and the position of the heat insulation baffle 70 is the original position. position, the time is 60 to 120 minutes; in the second step, the temperature at the top temperature measuring point 51 rises to 1480°C to 1510°C, the shutter 40 is closed, and the position of the heat insulation baffle 70 is the original position, and the time is 180 to 300 minutes; In the third step, within 30 to 60 minutes, the temperature of the top temperature measuring point 51 rises to 1520°C to 1550°C, and the position of the heat insulation baffle 70 rises by 3 to 7 cm; the fourth step: maintain the final state of the third step unchanged 270 ~330 minutes; the fifth step: within 30~60 minutes, the temperature of the top temperature measuring point 51 drops to 1495...

Embodiment 1

[0042] The first step: maintain the temperature at the top temperature measuring point 51 at 1175°C, the louvers 40 are closed, and the position of the heat insulation baffle 70 is the original position, and the time is 60 minutes;

[0043] In the second step, the temperature at the top temperature measuring point 51 rises rapidly to 1480°C, the shutters 40 are closed, and the position of the heat insulation baffle 70 remains unchanged from the original position, and the time is 180 minutes;

[0044] In the third step, within 30 minutes, the temperature at the top temperature measurement point 51 rises from the final temperature of the second step temperature measurement point to 1520°C, and the position of the heat insulation baffle 70 rises by 3 cm;

[0045] Step 4: Keep the final state of the third step unchanged for 270 minutes;

[0046] Step 5: The temperature at the top temperature measuring point 51 is lowered from the final temperature of the third step to 1500°C, and ...

Embodiment 2

[0050] Step 1: Maintain the temperature at the top temperature measuring point 51 at 1135°C, the position of the louvers is closed, and the position of the heat insulation baffle 70 is the original position, and the time is 120 minutes;

[0051] In the second step, the temperature at the top temperature measurement point 51 rises rapidly to 1510°C, the position of the louvers is closed, and the position of the heat insulation baffle 70 remains unchanged from the original position, and the time is 300 minutes;

[0052] In the third step, within 60 minutes, the temperature at the top temperature measurement point 51 rises from the final temperature of the second step temperature measurement point to 1550°C, and the position of the heat insulation baffle 70 rises by 7 cm;

[0053] Step 4: Keep the final state of the third step unchanged for 330 minutes;

[0054] Step 5: The temperature at the top temperature measuring point 51 is lowered from the final temperature of the third pa...

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Abstract

The invention discloses an ingot casting furnace and a method for controlling the retention height of a seed crystal in the quasi-single crystal casting process. Wherein, the ingot casting furnace includes: a heat insulation layer at the top; a heat insulation layer at the bottom, which is in the shape of a ring, and shutters are arranged at the inner ring of the ring, and the bottom heat insulation layer and the side heat insulation layer together form a cavity; the crucible , set in the cavity; heat insulation baffles, set at the junction of the bottom heat insulation layer and the side heat insulation layer, and extend toward the center of the cavity, and the top temperature measuring point, set between the side heat insulation layer and the crucible Between and located on the top of the cavity, the position of the heat insulation baffle can be adjusted to adjust the spatial distribution of the high temperature zone and the low temperature zone of the thermal field in the ingot furnace. By adjusting the position of the heat insulation baffle in the thermal field of the ingot furnace, the spatial distribution of the high-temperature zone and the low-temperature zone is adjusted, and in the quasi-single crystal casting process, the melting speed and remaining height of the seed crystal at the bottom of the crucible can be effectively controlled, thereby ensuring The remaining amount of seed crystal in the quasi-single crystal casting process improves the success rate of quasi-single crystal casting.

Description

technical field [0001] The invention relates to the field of quasi-single crystal silicon manufacturing, in particular to an ingot furnace and a method for controlling the height of seed crystal retention in the quasi-single crystal casting process. Background technique [0002] At present, the photovoltaic industry is developing rapidly. As a substitute for polycrystalline ingots, quasi-single crystal has great advantages in the photoelectric conversion efficiency of photovoltaic cells, and has become a popular product in the photovoltaic industry. [0003] Among them, the grain refers to the growth process of the crystalline substance, due to the limitation of the external space, it fails to develop into a crystal with a regular shape, but only crystallizes into a granular shape, that is, a monomer with the same crystal direction, called a grain. Quasi-single crystal, also known as quasi-single crystal, forms crystalline silicon material by ingot casting. On a silicon wafe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 潘家明魏景拓
Owner YINGLI GRP
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