A method and device for preparing a pn junction with surface passivation and crystalline silicon solar cells
A technology for solar cells and PN junctions, applied in the field of solar cells, can solve the problems of difficulty in obtaining temperature, inability to obtain emitter junctions, influence of doping junction distribution, etc., to avoid the loss of surface recombination, improve cell conversion efficiency, and process steps simple effect
Inactive Publication Date: 2016-06-15
CHINA SUNERGY CO LTD
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Problems solved by technology
The disadvantage is that it is difficult for this type of equipment to obtain a higher temperature (range of 1000-1100 degrees), which will have an impact on the distribution of the doped junction, and the emitter junction with the required doping distribution cannot be obtained.
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[0030] As shown in the figure, back metal electrode 1, silicon oxide 2, P-type substrate 3, silicon oxide 4, front metal electrode 5, silicon nitride 6; back reflection 11, point contact 12, back grid line 13, N-type substrate Bottom 14, no grid line 15; passivated emitter and rear local diffusion cell (PERL), passivation emitter and rear local diffusion cell (perl) adds a boron-rich diffusion layer under the back contact of the perc cell, To reduce the metal contact resistance. SiC slurry 31, quartz furnace door 32, quartz heat preservation retaining ring 33, furnace mouth equalizer 34, quartz boat 35, quartz reaction tube 16, furnace tail equalizer 17, process gas inlet 18, exhaust gas 19, constant temperature tank 20 , Exhaust gas discharge pipe 21, thermometer casing 22, constant temperature zone 23, exhaust gas discharge nozzle 24; wherein the constant temperature zone 23 of the diffusion furnace is provided with several temperature zone control systems.
[0031] Figur...
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Abstract
The invention relates to a method for preparing a surface-passivated PN joint and a crystalline silicon solar cell. The method comprises the following steps that (1) ion implantation doping is carried out; (2) after ion implantation doping, a silicon wafer is arranged in a rapid thermal annealing furnace tube, the temperature of the silicon wafer is improved from 600-700 DEG C to one temperature point between 950 DEG C and 1150 DEG C at a higher temperature-improving speed, rapid annealing is carried out at the atmosphere of inert gas at the same time, and repair of an ion implantation loss layer is finished in the process; (3) high-temperature annealing continues at the temperature of 1000-1150 DEG C and at the atmosphere of nitrogen and lasts for 10-100 seconds, repair of the ion implantation loss layer continues, and meanwhile activation and re-distribution of doping are carried out; (4) high-temperature on-line oxidizing annealing continues at the temperature of 1000-1150 DEG C and at the atmosphere of oxidation and oxygen or in a chlorine-doped oxidation mode. The invention further provides a rapid thermal oxidation annealing equipment system.
Description
technical field [0001] The invention relates to the field of solar cells in the photovoltaic industry, in particular to a method for preparing solar cell devices and corresponding equipment. Background technique [0002] A solar cell is a device that directly converts solar energy into electrical energy through the photovoltaic effect of a pn junction. With the increasing dual pressure of global energy supply shortage and environmental protection, the whole world is vigorously developing renewable energy. Solar cell power generation is the only renewable energy technology that is not completely restricted by regions and environments, and will inevitably play a major role in future energy development. Although the photovoltaic industry is currently in a relatively difficult trough, from the overall long-term trend, the photovoltaic industry is still in a stable and healthy development, and gradually matures. [0003] The traditional annealing technology after ion implantati...
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IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 黄海冰王丽春赵彦吕俊赵建华王艾华
Owner CHINA SUNERGY CO LTD