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Multi-axis capacitive accelerometer

An accelerometer and capacitive technology, which is applied in the field of multi-axis capacitive accelerometers, can solve the problems of temperature drift and impact resistance performance that cannot meet the requirements, and achieve the effect of reducing deformation and temperature drift

Active Publication Date: 2016-07-13
HANGZHOU SILAN MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has been found in practice that the temperature drift and shock resistance performance of current multi-axis capacitive accelerometers still cannot meet the requirements

Method used

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  • Multi-axis capacitive accelerometer
  • Multi-axis capacitive accelerometer
  • Multi-axis capacitive accelerometer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The multi-axis capacitive accelerometer of this embodiment is a dual-axis capacitive accelerometer, ie an X and Y axis accelerometer. figure 1 is the overall schematic diagram of the multi-axis capacitive accelerometer of this embodiment. Such as figure 1 As shown, the multi-axis capacitive accelerometer includes a substrate ( figure 1 not shown in ) and an XY-axis structure layer, the XY-axis structure layer includes a movable mass 31, a central anchor point 32, an elastic structure 33 and detection electrodes 34a, 34b.

[0027] continue to refer figure 1 , in this embodiment, the XY-axis structure layer 1a includes eight detection electrodes in total, and the eight detection electrodes are symmetrically distributed on the four corners of the movable mass 31. This placement method effectively utilizes the chip area and is conducive to improving the acceleration. meter sensitivity. In detail, the four detection electrodes 34a are symmetrically distributed on the lef...

Embodiment 2

[0036] The multi-axis capacitive accelerometer in this embodiment is a three-axis capacitive accelerometer, that is, it includes the X-axis and Y-axis accelerometers as described in Embodiment 1, and also includes a Z-axis accelerometer. Specific as Figure 6 As shown, the X-axis and Y-axis accelerometers include an XY-axis structure layer 1a, and the Z-axis accelerometer includes twisted Z-axis structure layers 1b and 1c located on both sides of the XY-axis structure layer 1a, and the XY-axis structure The layer 1a has a square shape as a whole, and the Z-axis structure layers 1b and 1c have a rectangular shape as a whole to save area as much as possible.

[0037] Figure 7 yes Figure 6 Schematic cross-section along line a when the base of the structure shown is warped, Figure 8 yes Figure 6 Schematic diagram of middle Z-axis structure layer 1b. Such as Figure 6 to Figure 8 As shown, the Z-axis structural layers 1b, 1c include: movable masses 17, 18, fixed anchor po...

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Abstract

The invention provides a multi-axis capacitive accelerometer. The central anchor point of the XY-axis accelerometer of the multi-axis capacitive accelerometer adopts a square with notches, which reduces the material of the substrate and the central anchor point when the temperature changes. Stresses due to differences in thermal expansion coefficients, thereby reducing deformation of the central anchor point, thereby reducing temperature drift.

Description

technical field [0001] The invention relates to a microelectromechanical structure for detecting acceleration, in particular to a multi-axis capacitive accelerometer. Background technique [0002] The Micro-Electro-Mechanic System (MEMS) inertial sensor made by surface technology is a three-dimensional micro-mechanical structure prepared by multiple thin film deposition and pattern processing with a silicon wafer as the substrate. Commonly used thin-film layer materials include: polysilicon, silicon nitride, silicon dioxide, and metals. Typical process steps include: substrate preparation, primary oxidation to form an insulating layer, deposition of the first layer of polysilicon, etching of polysilicon to form electrodes and interconnect lines, secondary oxidation to form a sacrificial layer, oxide layer etching to form vias, deposition Depositing a metal layer on the second layer of polysilicon, etching the metal layer to form interconnection lines, etching the second lay...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01P15/125G01P15/18B81B3/00
Inventor 汪建平邓登峰
Owner HANGZHOU SILAN MICROELECTRONICS