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NAND-FLASH bad block recovery method based on ECCs

A recovery method and error-correcting code technology, applied in the direction of response error generation and redundant code error detection, can solve the problems of unstable data writing speed, data loss, etc., to avoid data loss, reduce difficulty, avoid data loss, etc. The effect of unstable data writing speed

Inactive Publication Date: 2014-03-19
SHAANXI QIANSHAN AVIONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when using method 1 for bad block processing, it will cause the data writing speed to be unstable, and when the bad block has written data and cannot be read normally, it will cause data loss
When the second method is used to process bad blocks, it will directly cause the data written in the current bad block to be lost.

Method used

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  • NAND-FLASH bad block recovery method based on ECCs
  • NAND-FLASH bad block recovery method based on ECCs

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Embodiment

[0024] Example: Assume that the device consists of 8 NAND FLASH chips, corresponding to FLASH1 ~ FLASH8 respectively, and each FLASH has n blocks, corresponding to Block 1 ~Block n , including the following steps:

[0025] Step 1: Write the data to be recorded and stored into FLASH in sequence 1 -FLASH 4 The first line of Block1 in the chip, that is, Byte1-Byte4 is stored in FLASH in sequence 1 -FLASH 4 , each piece of FLASH is 8bit data;

[0026] Step 2: Calculate the verification code of the written data through ECC encoding, and write it into FLASH 5 ~FLASH 8 middle;

[0027] Step 3: After writing the first line of data, perform the second line of data and its check code, and so on;

[0028] Step 4: When reading data, for an erroneous FLASH data block, the corresponding Byte data cannot be read, and only the Byte data corresponding to the non-error FLASH data block and its corresponding check code can be read;

[0029] Step 5: Assign a fixed initial value to the By...

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Abstract

The invention belongs to the technical field of avionics, and particularly relates to an NAND-FLASH bad block recovery method based on ECCs. According to a large-volume data storage device which is composed of m NAND-FLASHes with each FLASH comprising n Blocks, first, data codes are written into the Blocks of the first m-k NAND-FLASHes, then, check codes after the data codes in a row are placed into the Blocks of the next k NAND-FLASHes, and following codes are arranged in the same way. The NAND-FLASH bad block recovery method based on the ECCs is applied to the large-volume data storage device composed of the multiple NAND-FLASHes; if bad blocks are encountered in the process of erasing the NAND-FLASHes, it is not needed that data are copied into an intact NAND-FLASH data block like in the traditional method, and therefore difficulty in management of the NAND-FLASH bad blocks is lowered.

Description

technical field [0001] The invention belongs to the technical field of avionics, and relates to large-capacity data storage speed and reliability technology, in particular to a recovery method for NAND-FLASH bad blocks based on ECC error correction codes. Background technique [0002] NAND-FLASH has developed rapidly in the electronic product application market because of its small size, non-volatility, multiple erasability, faster writing and erasing speed, and lower price per bit. [0003] NAND-FLASH will do a bad block calibration when the product leaves the factory. During use, due to the repeated erasing and writing of NAND-FLASH by the programmer during the programming process, the NAND-FLASH will be worn to a certain extent, resulting in bad blocks, resulting in unreliability or loss of stored data. At present, there are two traditional methods for dealing with bad blocks generated during the use of NAND-FLASH: the first method is to first mark the current bad blocks...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10
Inventor 程金贾宁
Owner SHAANXI QIANSHAN AVIONICS