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Systems and methods for providing voltage supply protection in memory devices

A voltage supply and memory technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as wrong voltage supply, failure to always avoid single failure of memory cell array, catastrophic failure of memory array, etc.

Active Publication Date: 2017-06-30
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Since a nonvolatile memory such as a flash memory is a semiconductor device whose array has a large number of microstructures, it is not always possible to avoid a single failure such as a single failure in the memory cell array that evolves only during chip operation
However, a fault in the memory array can result in a low impedance path on the high ohmic terminals, leading to catastrophic failure of the entire memory array
In particular, if the non-volatile memory device includes a voltage supply, such a low impedance path can cause the wrong voltage to be supplied to the memory array

Method used

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  • Systems and methods for providing voltage supply protection in memory devices
  • Systems and methods for providing voltage supply protection in memory devices
  • Systems and methods for providing voltage supply protection in memory devices

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Embodiment Construction

[0021] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or other changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description should not be taken as limiting, and the scope of the invention is defined by the appended claims.

[0022] FIG. 1A shows a conventional non-volatile memory device 1 comprising a plurality of non-volatile memory cells (NVM cells). The non-volatile memory cells are grouped into a first group 2 , a second group 3 and a third group 4 of non-volatile memory cells. Each group of NVM cells may correspond to a single page of non-volatile memory. The non-volatile memory device 1 further comprises a first voltage supply 10 and a second voltage supply 2...

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Abstract

The present invention relates to systems and methods for providing voltage supply protection in memory devices. The present invention relates to electronic storage systems, and more particularly, to a system for providing voltage supply protection in a memory device, and a method for providing voltage supply protection in a memory device. According to an embodiment, there is provided a system for providing voltage supply protection in a memory device, the system comprising a memory array comprising a plurality of memory cells arranged in groups of memory cells and a plurality of current limiting elements, Therein, each group of memory cells is associated with at least one current limiting element.

Description

technical field [0001] The present invention relates generally to electronic storage systems, and more particularly to systems for providing voltage supply protection in memory devices, and methods for providing voltage supply protection in memory devices. Background technique [0002] In many applications, such as those employing microcontrollers, high reliability memory devices, especially non-volatile memory devices, are required. For example, in the automotive sector, as the number of microcontrollers included in modern motor vehicles is increasing, the need for such memory systems is constantly increasing. For such a variety of purposes, these microcontrollers are used as engine and transmission control, advanced driver assistance systems or infotainment systems. All of these applications require memory to function. Because many of these applications involve safety-related aspects, highly reliable memories are required. In addition, such high-quality storage systems ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
CPCG11C5/143G11C29/04G11C29/02G11C29/83G11C29/832
Inventor 扬·奥特尔斯泰特渥尔夫·阿勒斯莱昂纳多·卡斯特罗米哈伊尔·叶夫列莫夫托马斯·克恩埃德温·帕帕里斯托
Owner INFINEON TECH AG