Improved differential framework XPM memory unit
A storage unit and differential technology, applied in the field of non-volatile programmable memory, to achieve the effects of stability guarantee, high stability, and expansion of distinguishable current
Inactive Publication Date: 2014-03-26
SUZHOU KUANWEN ELECTRONICS SCI & TECH
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[0007] In order to overcome the deficiencies in the prior art, the present invention provides an improved differential architecture XPM storage unit. On the basis of the traditional XPM storage unit, two branches are used to compare the input differential amplifier when reading, which avoids the use of reference circuits with The mismatch problem that comes, greatly improves the stability of reading
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[0021] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.
[0022] refer to image 3 As shown, an improved differential architecture XPM storage unit includes two branches, each of which includes a MOS field effect transistor and a MOS data storage element, the gate of the MOS field effect transistor, and the gate dielectric of the gate and the first and second doped semiconductor regions under the gate dielectric, the first and second doped semiconductor regions are respectively used as the source and drain of the MOS transistor, and the MOS data storage element has a conductive structure that is the The gate of the MOS transistor, a layer of ultra-thin dielectric under the conductive structure, and the first doped semiconductor region under the conductive structure.
[0023] Further, the first and second doped semiconductor regions of the MOS field effect transistor are spaced apart and de...
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The invention discloses an improved differential framework XPM memory unit which comprises tow branches, wherein each branch comprises an MOS field effect transistor and an MOS data storage element; each MOS field effect transistor comprises a grid, a gate dielectric of the grid, a first doped semiconductor zone and a second doped semiconductor zone below the ate dielectric; the first doped semiconductor zone and the second doped semiconductor zone are respectively used as the source electrode and the drain electrode of the corresponding MOS pipe; each MOX data storage element comprises a conductive structure namely the grid of the corresponding MOS pipe, a layer of ultra-thin medium below the conductive structure and a first doped semiconductor zone below the conductive structure. According to the invention, since the differential framework is adopted, distinguishable currents are increased effectively during the operation of reading; the branch impedance matching of the memory unit is better, and stability is higher.
Description
technical field [0001] The invention relates to a non-volatile programmable memory, in particular to an improved differential architecture XPM storage unit. Background technique [0002] With the rapid development of microelectronics and computer technology, we are moving towards an information society. The information society is inseparable from the storage of information. For nearly half a century, people have continuously explored new storage technologies and formed a wide variety of memory families, among which Non-Volatile Semiconductor Memory (Non-Volatile Semiconductor Memory) has become a A popular field for memory families. [0003] Among them, one-time programmable non-volatile memory based on dielectric breakdown has received more attention. It can provide flexible and low-cost solutions for circuit applications, so it is widely used in data storage backup, code storage, and initial information storage. , RFID marked information storage and other fields. [00...
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IPC IPC(8): G11C16/26
Inventor 李力南翁宇飞姜伟张其笑
Owner SUZHOU KUANWEN ELECTRONICS SCI & TECH