Method of forming semiconductor device and method of forming mos transistor

Abstract

A formation method of a semiconductor device and a formation method of an MOS transistor are provided. The formation method of the semiconductor device includes the following steps that: a substrate is provided, a dummy gate is formed on the substrate, and the top wall and side walls of the dummy gate are covered with mask layers; and ion implantation is performed on the surface of the substrate and the surface of the mask layer at the top of the dummy gate, such that an ion implantation layer can be formed; the mask layers on the side walls of the dummy gate are removed; and the ion implanted layer is removed. The semiconductor device and the MOS transistor formed through adopting the methods provided by the invention are advantageous in stable performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device and a method for forming a MOS transistor. Background technique [0002] In the existing manufacturing process of semiconductor devices, since stress can change the energy gap and carrier mobility of silicon materials, it has become an increasingly common means to improve the performance of MOS transistors through stress. Specifically, by properly controlling the stress, the mobility of carriers (electrons in NMOS transistors and holes in PMOS transistors) can be increased, thereby increasing the driving current, thereby greatly improving the performance of MOS transistors. [0003] At present, an embedded silicon germanium (Embedded SiGe) technology is adopted, that is, a silicon germanium layer is first formed in a region where a heavily doped region needs to be formed, and then doped to form a heavily doped region...

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Problems solved by technology

[0006] However, the performance of MOS transistors formed by the prior art is not stable enough

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