Transistors and methods of forming them

Abstract

The present invention provides a transistor and its forming method. The forming method includes: forming a first stress layer on a semiconductor substrate; forming a gate structure on the first stress layer, and the gate structure includes a first gate on the stress layer; removing the first gate to expose the first stress layer; patterning the first stress layer to form a first opening through the first stress layer; filling the first opening with the material of the second stress layer until the material of the second stress layer is flush with the first stress layer to form a second stress layer; forming a second gate on the second stress layer. Correspondingly, the present invention also provides a transistor formed by the method for forming the transistor. The invention can improve the electron mobility in the transistor and improve the performance of the transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a transistor and a forming method thereof. Background technique [0002] As the most basic semiconductor device, transistors are currently being widely used. With the increase of component density and integration of semiconductor devices, the gate size of transistors has become shorter than before; however, the shortened gate size of transistors will make transistors The short channel effect is generated, and then leakage current is generated, which finally affects the electrical performance of the semiconductor device. At present, in the prior art, the stress of the channel region of the transistor is mainly increased to increase the mobility of carriers, thereby increasing the driving current of the transistor and reducing the leakage current in the transistor. [0003] In the prior art, the method for increasing the stress of the channel region of the tran...

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Problems solved by technology

[0009] However, the electron mobility in the channel region of the transistor formed by the method for forming the transistor in the prior art is still low, and the performance of the transistor cannot be better improved.

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