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Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as large parasitic resistance and parasitic capacitance, increased resistance and capacitance delay, and reduced AC performance of devices, so as to reduce parasitic resistance and parasitic capacitance and improve device performance , the effect of improving the carrier mobility

Active Publication Date: 2017-06-16
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, on the other hand, FinFET has relatively large parasitic resistance and parasitic capacitance compared to MOSFET
As a result, the resistance-capacitance delay increases and the AC performance of the device decreases
Also, stress engineering is relatively difficult in FinFETs compared to MOSFETs

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0027] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0028] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, si...

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Abstract

The application discloses a semiconductor device and a manufacture method thereof. According to one embodiment, the semiconductor device can comprise a semiconductor layer, a source and a drain, and a gate, wherein a semiconductor substrate arranged on the semiconductor layer and including a hollow cavity extending and passing through the semiconductor substrate; the source and the drain are formed on the semiconductor layer and are connected with a first side surface and a second side surface opposite to each other of the semiconductor substrate; the gate respectively connected with a third side surface and a fourth side surface opposite to each other of the semiconductor substrate.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a semiconductor device and a manufacturing method thereof. Background technique [0002] As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) continues to shorten, a series of effects that can be ignored in the MOSFET long-channel model become more and more significant, and even become the dominant factors affecting performance. This phenomenon is collectively referred to as short channel effect. The short channel effect is easy to deteriorate the electrical performance of the device, such as causing a decrease in the gate threshold voltage, an increase in power consumption, and a decrease in the signal-to-noise ratio. [0003] In order to control the short channel effect, a three-dimensional semiconductor device such as a fin field effect transistor (FinFET) is proposed. Compared with the planar MOSFET, the three-dimensional FinF...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0615H01L29/66681H01L29/7816
Inventor 朱慧珑梁擎擎钟汇才尹海洲骆志炯叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI