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A magnetic random access memory and its manufacturing method

A technology of random access memory and manufacturing method, applied in the manufacture/processing of electromagnetic devices, resistors controlled by magnetic fields, etc., can solve the problem of affecting the yield of film layer alignment devices, alignment marks and overlapping marks are easy to be oxidized and other issues to achieve the effect of preventing oxidation, improving performance and yield, and preventing oxidation

Active Publication Date: 2016-08-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since copper is easily oxidized when exposed to air, and alignment marks are open, alignment marks and overlapping marks are often easily oxidized, which affects subsequent film layer alignment and device yield.

Method used

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  • A magnetic random access memory and its manufacturing method
  • A magnetic random access memory and its manufacturing method
  • A magnetic random access memory and its manufacturing method

Examples

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Embodiment 1

[0043] Below, refer to Figure 1A-Figure 1L and figure 2 The detailed steps of an exemplary method of the manufacturing method of the magnetic random access memory proposed by the present invention will be described. refer to Figure 1A-Figure 1L , which shows a schematic cross-sectional view of each step of the manufacturing method of the magnetic random access memory (MRAM) proposed by the present invention. details as follows:

[0044] Step S201: Provide a front-end device, the front-end device includes a core area, an alignment mark area and an overlapping mark area, metal lines are formed in the core area, alignment marks are formed in the alignment mark area, and the overlapping The mark area is formed with overlapping marks.

[0045] Specifically, such as Figure 1AAs shown, a front-end device 100 is provided, the front-end device 100 includes a core area (corearea), an alignment mark area (alignment mark area) and an overlapping mark area (overlay mark area), the c...

Embodiment 2

[0086] An embodiment of the present invention provides a magnetic random access memory (MRAM), which is manufactured by using the manufacturing method of the above embodiment, such as Figure 1L As shown, the MRAM includes a front-end device 100 and a magnetic tunnel junction (MTJ) 1051'. The front-end device 100 includes a core area formed with a metal line 1011, an alignment mark area formed with an alignment mark (alignment mark) 1012 and a An overlay mark area with an overlay mark 1013, wherein a conductive metal line protection layer 1031 is formed above the metal line 1011, and a conductive alignment mark protection layer is formed above the alignment mark 1012 1032 , a conductive overlapping mark protection layer 1033 is formed above the overlapping mark 1013 , and the MTJ 1051 ′ is located above the metal line protection layer 1031 and connected to the metal line 1011 through it.

[0087] Wherein, the metal line 1011 , the alignment mark 1012 , and the overlapping mark...

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Abstract

The invention provides a magnetic random access memory and a manufacturing method thereof and relates to the technical field of semiconductors. The magnetic random access memory prevents effectively oxidation of registration marks and overlapping marks through increasing a step of forming a protective layer on a metal wire, the registration marks and the overlapping marks so that performance and yield of a manufactured device are improved. The magnetic random access memory prevents effectively the oxidation of the registration marks and overlapping marks through increasing the step of forming the protective layer on the metal wire, registration marks and overlapping marks so that the performance and yield of the manufactured device are improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a magnetic random access memory (MRAM) and a manufacturing method thereof. Background technique [0002] In semiconductor technology, magnetic random access memory (MRAM) is a non-volatile random access memory technology that could replace dynamic random access memory (DRAM) as the standard memory in computing devices. Included in MRAM is a structure in which ferromagnetic layers are separated by an insulating nonmagnetic layer (barrier), forming a magnetic tunnel junction (MTJ). An existing MRAM device structure is based on a field-effect transistor (FET) configuration, and each MRAM cell includes a select transistor connected to it in addition to an MTJ. In conventional FET-based MRAMs, MTJs are usually formed on conductive metal lines (typically copper). [0003] One challenge in forming MRAM devices during back-end-of-line (BEOL) processing of semiconductor d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/08
Inventor 曾贤成
Owner SEMICON MFG INT (SHANGHAI) CORP