Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Column parallel analog-to-digital converter, pixel photosensitive value output method and CMOS image sensor

A column analog-to-digital converter and analog-to-digital converter technology, which is used in image communication, physical parameter compensation/prevention, television, etc., can solve the problems of inconsistent time nodes, long reset phase, and reduced analog-to-digital conversion efficiency.

Active Publication Date: 2014-03-26
GALAXYCORE SHANGHAI
View PDF6 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this method, since the reset voltage Vref of each column of pixel units is actually generated by the pixel unit, the generated reset voltage Vref will be randomly distributed within a certain value range, so that the time nodes before and after each comparator inversion in the reset phase Not uniform, resulting in a longer reset phase, which reduces the efficiency of the analog-to-digital conversion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Column parallel analog-to-digital converter, pixel photosensitive value output method and CMOS image sensor
  • Column parallel analog-to-digital converter, pixel photosensitive value output method and CMOS image sensor
  • Column parallel analog-to-digital converter, pixel photosensitive value output method and CMOS image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0101] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0102] Secondly, the present invention is described in detail by means of schematic diagrams. When describing the embodiments of the present invention in detail, for convenience of explanation, the schematic diagrams are only examples, which should not limit the protection scope of the present invention.

[0103] After research, the inventors found that the analog-to-digital conversion efficiency of the column-parallel analog-to-digital converters in the prior art is low, partly due to the time required to obtain the count v...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a column parallel analog-to-digital converter, a pixel photosensitive value output method and a CMOS image sensor. The column parallel analog-to-digital converter comprises a ramp generator, a counting unit and multiple column analog-to-digital converters, each column analog-to-digital converter corresponds to one row of pixel units of a pixel array and comprises a comparison processing unit and a storage unit, and each comparison processing unit comprises a capacitor, a switching module and a comparator. The column parallel analog-to-digital converter can shorten analog-to-digital conversion time and improve conversion efficiency.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to a column-parallel analog-to-digital converter, a pixel photosensitive signal output method and a CMOS image sensor. Background technique [0002] At present, image sensors mainly include CCD image sensor (Charged Coupled Device) and CMOS image sensor (CMOS Imaging Sensor, CIS). Compared with CDD image sensors, CMOS image sensors have the advantages of low power consumption, low noise, wide dynamic range, small size, and low cost. Therefore, CMOS image sensors have gradually become a research and development hotspot in this technical field. [0003] The Analog-to-Digital Converter (ADC) is an important part of the CMOS image sensor, used to convert the analog signal generated by each pixel unit into a digital signal, and is the interface between the analog circuit and the digital circuit. [0004] The analog signal generated by the pixel unit is the actual analog value of the light s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04N5/374H04N5/3745H04N5/378H03M1/06H03M1/08
Inventor 赵立新董小英俞大立乔劲轩
Owner GALAXYCORE SHANGHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com