Quick-flash memory programming and reading method

A memory and memory unit technology, applied in static memory, read-only memory, digital memory information, etc., can solve the problems of reducing the efficiency of reading flash memory, affecting storage capacity, and consuming time

Inactive Publication Date: 2014-04-02
QUANTA STORAGE INC
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Problems solved by technology

[0008] However, when reading the flash memory in the above-mentioned patent, it takes time to complete the secondary programming of all memory cells, and then read and process useless data, which not only reduces the efficiency of reading the flash memory, but also needs to free up the flash memory memory space, store a large amount of useless data, and affect the storage capacity

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Embodiment Construction

[0028] In order to achieve the above object, the present invention adopts the technical means and its effects, and now presents preferred embodiments, which are described as follows in conjunction with the accompanying drawings.

[0029] Please also see figure 2 and image 3 , figure 2 For the structure of the flash memory of the present invention, image 3 It is the logical page allocation table of the present invention. figure 2 The flash memory 30 of the present invention mainly includes a memory unit 31 and a controller 32 . The memory unit 31 includes multiple rows of memory cells, which are divided into multiple memory blocks 33 , each memory block 33 includes 256 logical pages, and each logical page has a corresponding logical address for storing data. The controller 32 includes a storage unit 34 , the storage unit 34 stores control parameters of the flash memory 30 , and cooperates with the controller 32 to control access to data stored in the memory unit 31 . ...

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Abstract

A quick-flash memory programming and reading method comprises the steps: when programming, storing a last programming logical page number of a memory block of the quick-flash memory; when reading, according to the stored last programming logical page number, and cooperating with a logical page order and allocation of a preset memory block logical page allocation table, and judging programming times of a memory unit in the memory block; and according to the judged programming times, selecting a preset critical voltage, and performing a reading program to improve the reading efficiency.

Description

technical field [0001] The invention relates to a flash memory, in particular to a method for storing the last programming logical page number in the flash memory as a method for judging the programming times and performing reading. Background technique [0002] Due to the non-volatile flash memory (Flash Memory), no power is required to maintain data storage, not only has a faster erasing (Erase), programming (Program) and reading (read) speed, small size and storage density High, has become the main data storage device. [0003] Flash memory is generally divided into single-level cell (Single Level Cell, SLC for short), multi-level cell (Multi-Level Cell, MLC for short), triple-level cell ( Flash memories such as Triple Level Cell (TLC for short) and Quad Level Cell (QLC for short). Among them, a single-level cell (SLC) can store one bit of data, a multi-level cell (MLC) can store two bits of data, a triple-level cell (TLC) can store three bits of data, and a quadruple-l...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C16/02
CPCG11C16/10G11C11/5628G11C11/5642G11C2211/5646
Inventor 游英凯謝景星萧亦隆
Owner QUANTA STORAGE INC
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